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    Article

    Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector via Rapid Thermal Annealing

    We demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV...

    D. K. Sengupta, S. Kim, H. C. Kuo, A. P. Curtis in MRS Online Proceedings Library (1998)

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    Article

    Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector

    A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3 - 5.3 fum and 7.5 - 14fum, respectively. Th...

    D. K. Sengupta, S. D. Gunapala, S. V. Bandara, F. Pool in MRS Online Proceedings Library (1997)

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    Article

    Growth and Characterization of InAsxP1−x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Expitaxy

    InAsxPi.x/InP (10 period 50/100Å with x=0.25-0.79) pseudomorphically strained multiple quantum wells (SMQWs) were grown by gas source molecular beam expitaxy (GSMBE) at 470°C and characterized by cross-sectional ...

    H. C. Kuo, S. Thomas, A. P. Curtis, G. E. Stillman in MRS Online Proceedings Library (1996)

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    Article

    Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells

    P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 Å) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epi...

    D. K. Sengupta, S. Kim, T. Horton, H. C. Kuo, S. Thomas in MRS Online Proceedings Library (1996)