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    Article

    The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects

    The presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjecte...

    P. M. Fauchet, G. W. Wicks, Y. Kostoulas, A. I. Lobad… in MRS Online Proceedings Library (1995)

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    Article

    Femtosecond optical response of low temperature grown In0.53Ga0.47As

    A femtosecond, tunable color center laser was used to conduct degenerate pump-probe transmission spectroscopy of thin film low temperature grown molecular beam epitaxy In0.53Ga0.47As samples. Low temperature mole...

    B. C. Tousley, S. M. Mehta, A. I. Lobad, P. J. Rodney… in Journal of Electronic Materials (1993)