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    AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

    GaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/mi...

    Yu.V. Melnik, A.E. Nikolaev, S.I. Stepanov, A.S. Zubrilov… in MRS Online Proceedings Library (1997)

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    Physical properties of bulk single-crystal wafers of gallium nitride

    A study has been performed of the crystalline structure and optical characteristics of single crystals of gallium nitride (GaN). The crystals were grown from a gallium-based flux. X-ray structural analysis sho...

    V. A. Ivantsov, V. A. Sukhoveev, V. I. Nikolaev… in Physics of the Solid State (1997)

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    GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

    Gallium nitride films were successfully grown by HVPE technique on p-type 6H-SiC substrate. The layers exhibit high crystal quality as was determined by X-ray diffraction. Photoluminescence (PL) of these films...

    A.E. Nikolaev, Yu.V. Melnik, M.N. Blashenkov… in MRS Internet Journal of Nitride Semiconduc… (1996)

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  4. Article

    Fabrication of GaN mesa structures

    We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity Rc ~2×10-5 Ω×cm2 and Ni ohmic contacts for p-doped GaN with Rc ~ 4×10

    K.V. Vassilevski, M.G. Rastegaeva… in MRS Internet Journal of Nitride Semiconduc… (1996)

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