Abstract
The as-grown molecular beam epitaxy (MBE) (211)B HgCdTe surface has variable surface topography, which is primarily dependent on substrate temperature and substrate/epilayer mismatch. Nano-ripple formation and cross-hatch patterning are the predominant structural features observed. Nano-ripples preferentially form parallel to the \( [\bar {1}11] \) and are from 0 Å to 100 Å in height with a wavelength between 0.1 μm and 0.8 μm. Cross-hatch patterns result from slip dislocations in the three {111} planes intersecting the (211) growth surface. The cross-hatch step height is 4 ± 1 Å (limited data set). This indicates that only a bi-layer slip (Hg/Cd + Te) in the {111} slip plane occurs. For the deposition of MBE (211)B HgCdTe/CdTe/Si, the reorientation of multiple nano-ripples coalesced into “packets” forms cross-hatch patterns. The as-grown MBE (211)B CdTe/Si surface is highly variable but displays nano-ripples and no cross-hatch pattern. Three types of defects were observed by atomic force microscopy (AFM): needle, void/hillock, and voids.
Similar content being viewed by others
References
J.M. Arias, M. Zandian, J. Bajaj, J.G. Pasko, L.O. Bubulac, S.H. Shin, R.E. DeWames, J. Electron. Mater. 24, 521 (1995)
M. Martinka, L.A. Almeida, J.D. Benson, J.H. Dinan, J. Electron. Mater. 31, 732 (2002)
L.A. Almeida, J.N. Johnson, J.D. Benson, J.H. Dinan, B. Johs, J. Electron. Mater. 27, 500 (1998)
Digital Instruments Veeco Metrology, Santa Barbara, CA 93117
J.D. Benson, J.B. Varesi, A.J. Stoltz, E.P.G. Smith, S.M. Johnson, M. Jaime-Vasquez, J.K. Markunas, L.A. Almeida, J.C. Molstad, J. Electron. Mater. 35, 1434 (2006)
L. Marsal, H. Mariette, Y. Samson, J.L. Rouviere, E. Picard, Appl. Phys. Lett. 73, 2974 (1998)
A.G. Cullis, Mater. Res. Soc. Symp. Proc. 399, 303 (1996)
M. Albrecht, S. Christiansen, J. Michler, W. Dorsch, H.P. Strunk, P.O. Hansson, E. Bauser, Appl. Phys. Lett. 67, 1232 (1995)
M. Yamamoto, M. Higashiwaki, S. Shimomura, N. Sano, S. Hiyamizu, Jpn. J. Appl. Phys. 36, 6285 (1997)
R. Beanland, M. Aindow, T.B. Joyce, P. Kidd, M. Lourenco, P.J. Goodhew, J. Cryst. Growth 149, 1 (1995)
Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17, 1140 (2006)
T. Mano, R. Notzel, G.J. Hamhuis, T.J. Eijkemans, J.H. Wolter, Physica E 21, 568 (2004)
P. Tejedor, P. Šmilauer, C. Roberts, B.A. Joyce, Phys. Rev. B 59, 2341 (1999)
Y.H. **e, G.H. Gilmer, C. Roland, P.J. Silverman, S.K. BURATTO, J.Y. Cheng, E.A. Fitzgerald, A.R. Kortan, S. Schuppler, M.A. Marcus and P.H. Citrin, Phys. Rev. Lett. 73, 3006 (1994)
M. Martinka, L.A. Almeida, J.D. Benson, J.H. Dinan, J. Electron. Mater. 30, 632 (2001)
H. Gao, W.D. Nix, Annu. Rev. Mater. Sci. 29, 173 (1999)
C.S. Ozkan, W.D. Nix, H. Gao, Appl. Phys. Lett. 70, 2247 (1997)
D.E. Jesson, K.M. Chen, S.J. Pennycook, MRS Bull. 21, 31 (1996)
T.W. Kim, H.S. Lee, H.L. Park, Appl. Phys. Lett. 88, 043111 (2006)
T.W. Kim, D.C. Choo, D.U. Lee, H.S. Lee, M.S. Jang, H.L. Park, Appl. Phys. Lett. 81, 487 (2002)
D. Martrou, N. Magnea, Thin Solid Films 367, 48 (2000)
H. Mariette, L. Marsal, L. Besombes, F. Trinjod, B. Gilles, K. Kheng, J.L. Rouviere, J. Cryst. Growth 237–239, 227 (2002)
I.V. Sabinina, A.K. Gutakovsky, Y.G. Sidorov, A.V. Latyshev, J. Cryst. Growth 274, 339 (2005)
M. Azoulay, M.A. George, A. Burger, W.E. Collins, E. Silberman, J. Cryst. Growth 138, 517 (1994)
Author information
Authors and Affiliations
Corresponding author
Additional information
(Received 6/23/06; accepted 2/18/07)
Rights and permissions
About this article
Cite this article
Benson, J., Almeida, L., Carmody, M. et al. Surface Structure of Molecular Beam Epitaxy (211)B HgCdTe. J. Electron. Mater. 36, 949–957 (2007). https://doi.org/10.1007/s11664-007-0143-3
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-007-0143-3