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Influence of nickel incorporation on structural, optical and electrical characteristics of SILAR synthesized CuO thin films

  • Original Paper: Functional coatings, thin films and membranes (including deposition techniques)
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Abstract

In this report, we have primarily studied the influence of nickel (Ni) incorporation on ac electrical conductivity, dielectric relaxation mechanism and impedance spectroscopy characteristics of copper oxide (CuO) thin films synthesized by successive ion layer adsorption and reaction (SILAR) technique. The materials has been characterized using X-ray diffraction and UV–VIS spectrophotometric measurements. Reduction in grain size in doped films up to a certain extent of do** (tentatively 6%) were confirmed from XRD analysis, beyond which there is a reverse tendency. Increase in band gap in doped films were observed up to 6% do** level which could be associated with enhanced carrier density in doped films. Impedance spectroscopy analysis confirmed enhancement of ac conductivity and dielectric constant for doped samples. The results are useful for capacitive application of the films. Beyond 6% do** level, AC conductivity and dielectric constant shows a reverse tendency indicating reduced density of charge carriers. Nyquist plot shows contribution of both grain and grain boundary towards total resistance and capacitance. Imaginary part of complex modulus and imaginary part of complex impedance was used to find the migration/activation energy to electrical conduction process. Nearly identical result was obtained from relaxation frequency/relaxation time approach suggesting hop** mechanism of charge carriers.

Highlights

  • Successful incorporation of Ni in CuO thin film through SILAR technique.

  • Reduction of grain size and enhancement of band gap up to 6% Ni incorporation.

  • Enhancement of ac conductivity and dielectric constant up to 6% Ni incorporation.

  • Reverse tends in structural, optical and electrical characteristics beyond a certain do** level.

  • Contribution of both grain and grain boundary towards total resistance and capacitance.

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Acknowledgements

One of the authors (MRD) acknowledges University Grants Commission (UGC), India for providing Junior Research Fellowship (Ref. No. 21/12/2014(ii)EU-V) during the work.

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Correspondence to Partha Mitra.

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Das, M.R., Mitra, P. Influence of nickel incorporation on structural, optical and electrical characteristics of SILAR synthesized CuO thin films. J Sol-Gel Sci Technol 87, 59–73 (2018). https://doi.org/10.1007/s10971-018-4711-1

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  • DOI: https://doi.org/10.1007/s10971-018-4711-1

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