Abstract
The influence of three kinds of precursor depositions on the performance of corresponding Cu2ZnSnS4 solar cells has been investigated, which includes evaporation of stacking metal layers (Mo/Zn/Cu/Sn), co-evaporation of metal elements (Mo/(Zn,Cu,Sn)) and co-evaporation of metals together with a small amount of sulfur (Mo/(Zn,Cu,Sn,S)) . It is found that Mo/(Zn,Cu,Sn) leads to large grain absorber and the best open circuit voltage VOC, short circuit current density JSC and efficiency; Mo/Zn/Cu/Sn produces a porous structure with small grain size which causes lowest shunt resistance, VOC, JSC and efficiency; Mo/(Zn,Cu,Sn,S) results in a dense film with small grain size which induces highest shunt resistance (RSH) and fill factor (FF); ~200 nm thick MoS2 layer is formed during the sulfurization.
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Acknowledgment
This program has been supported by the Australian Government through the Australian Renewable Energy Agency and Australian Research Council and China Guodian Corporation. Responsibility for the views, information or advice expressed herein is not accepted by the Australian Government. The authors acknowledge the facilities in Electron Microscope Unit of The University of New South Wales.
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Cui, H., Li, W., Liu, X. et al. Optimization of precursor deposition for evaporated Cu2ZnSnS4 solar cells. Appl. Phys. A 118, 893–899 (2015). https://doi.org/10.1007/s00339-014-8806-4
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DOI: https://doi.org/10.1007/s00339-014-8806-4