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Extrinsic Defects in Nanostructured Semiconductors

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Nanostructured Photocatalyst via Defect Engineering

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Abstract

The concept of extrinsic deficiency is usually attributed to the introduction of certain foreign atoms in the crystal lattice of target materials and consequent manipulation over their concentration, distribution, diffusion, and interaction with intrinsic defects such as vacancies interstitials, etc. Under proper management, it might result in significant enhancement of structural, optical electronic, and electrical properties which eventually could be used to improve photocatalytic and photoelectrochemical performances. The reliability of this approach is often defined in terms of overall strategies, and thus certain difficulties might exist in applying it to specific composition or compound that has its own uniqueness and particulate features. For example, the same element that is used to modify TiO2 and 2-D MoS2 might have absolutely oppose impact on them. Following it, the goal of this chapter is to discuss in detail individual and selected characteristics of some widely applied materials after been subjected to do**.

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  1. National Synchrotron Radiation Research Center, Hsinchu, Taiwan

    Vitaly Gurylev

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Gurylev, V. (2021). Extrinsic Defects in Nanostructured Semiconductors. In: Nanostructured Photocatalyst via Defect Engineering. Springer, Cham. https://doi.org/10.1007/978-3-030-81911-8_10

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