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Noncontact Characterization Techniques of GaN-Based Terahertz Devices

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Advanced Materials for Future Terahertz Devices, Circuits and Systems

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 727))

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Abstract

The fresh developments in the area of terahertz (THz) devices and systems based on gallium nitride (GaN) have lifted the requirement of the state-of-the-art noncontact characterization techniques. In this chapter, three major noncontact characterization techniques used for characterizing GaN-based THz devices have been described in details; those are (i) THz time-domain spectroscopy, (ii) laser-induced THz emission spectroscopy, and (iii) THz electromodulation spectroscopy. These noncontact characterization techniques have been established as potential alternatives of conventional contact measurement techniques due to their accuracy, reliability, and capability of providing noteworthy amount of visually interpretable information.

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Authors and Affiliations

  1. Department of Electrical Engineering, Cooch Behar Government Engineering College, West Bengal, Harinchawra, Ghughumari, Cooch Behar, 736170, India

    Prajukta Mukherjee

  2. Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, West Bengal, Harinchawra, Ghughumari, Cooch Behar, 736170, India

    Aritra Acharyya

  3. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, 432-8011, Japan

    Hiroshi Inokawa

  4. Centre for Organic Spin-Tronics and Optoelectronics Devices (COSOD), Mining Engineering Department, Kazi Nazrul University, Asansol, Burdwan, West Bengal, 713340, India

    Arindam Biswas

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  1. Prajukta Mukherjee
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  1. Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Cooch Behar, India

    Aritra Acharyya

  2. Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Cooch Behar, India

    Palash Das

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Mukherjee, P., Acharyya, A., Inokawa, H., Biswas, A. (2021). Noncontact Characterization Techniques of GaN-Based Terahertz Devices. In: Acharyya, A., Das, P. (eds) Advanced Materials for Future Terahertz Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 727. Springer, Singapore. https://doi.org/10.1007/978-981-33-4489-1_3

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