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Fault Isolation and Failure Analysis of 3D Packaging

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3D Microelectronic Packaging

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 57))

Abstract

The high level of functional integration and the complex package architecture in advanced 3D packages pose a significant challenge for conventional Fault Isolation (FI) and Failure analysis (FA) methods. High-resolution nondestructive FI and imaging tools, as well as innovative applications of FA techniques are required to tackle the technical and throughput challenges. In this Chapter, the applications of FI and FA techniques such as Time domain reflectrometry (TDR), Electro Optic Terahertz Pulse Reflectometry (EOTPR), Lock-in Thermography (LIT), Scanning Superconducting Quantum Interference Device (SQUID) Microscopy (SSM), Scanning Acoustic microscopy (SAM), 2D X-ray radiography, 3D X-ray Computed Tomography (CT), laser ablation, Plasma Focused Ion Beam (FIB), Broad-beam Argon Ion Milling, Energy-dispersive X-ray spectroscopy (EDX), X-ray Photoelectron Spectroscopy (XPS), Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), and Electron Backscatter Diffraction (EBSD) to 3D packages are reviewed along with the key FI and FA challenges. 3D package FA Strategies of building up efficient FI-FA flow and in-depth root cause studies to provide solution paths are discussed and demonstrated by case studies.

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Acknowledgement

The editors would like to thank Frank Altmann and Sebastian Brand from Fraunhofer-Institute for Microstructure of Materials and Systems IMWS in Germany for their critical review of this Chapter.

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  1. Intel Corporation, Chandler, AZ, USA

    Yan Li & Deepak Goyal

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  1. Yan Li
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  1. Intel Corporation, Chandler, Arizona, USA

    Yan Li

  2. Intel Corporation, Chandler, Arizona, USA

    Deepak Goyal

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Li, Y., Goyal, D. (2017). Fault Isolation and Failure Analysis of 3D Packaging. In: Li, Y., Goyal, D. (eds) 3D Microelectronic Packaging. Springer Series in Advanced Microelectronics, vol 57. Springer, Cham. https://doi.org/10.1007/978-3-319-44586-1_15

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  • DOI: https://doi.org/10.1007/978-3-319-44586-1_15

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