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Transport Properties

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Localized to Itinerant Electronic Transition in Perovskite Oxides

Part of the book series: Structure and Bonding ((STRUCTURE,volume 98))

Abstract

The resistivity ρ(T) and thermoelectric power α(T) under different hydrostatic pressures are correlated with structure and other physical properties of single-valent and mixed-valent AMO3 perovskites in which M is a first-row transition element. Special attention is given to transitions from localized to itinerant electronic behavior in the MO3 array that are induced by pressure or by substitution on the A sites of isovalent or aliovalent cations. The lattice instabilities at this cross-over are shown to give rise to multicenter polarons on one side, strong-correlation fluctuations on the other, and to the formation of vibronic states at crossover. Dynamic phase segregation gives rise to a colossal magnetoresistance (CMR) in mixed-valent manganese oxides; in the copper-oxide superconductors with perovskite-related structure, lattice instabilities are manifest in a spinodal segregation below room temperature between an antiferromagnetic parent phase and the superconductive phase on one side, to the superconductive phase and an itinerant-electron phase containing strong-correlation fluctuations on the other. The normal state of the superconductive phase is a complex polaron and vibronic liquid covering the compositional range 0.1 < p < 0.25 holes/Cu atom just below 300 K. On cooling, ordering of the holes narrows the compositional range of the superconductive phase to a quantum critical point at pc ≈ 1/6. Where ordering of the holes leads to itinerant electrons in the CuO2 sheets, itinerant-electron states hybridize with optical phonons propagating along Cu-O-Cu chains; the heavy fermions produce a superconductive gap with symmetry (x2 - y2) + ixy.

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    John B. Goodenough & J.-S. Zhou

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Goodenough, J.B., Zhou, JS. (2001). Transport Properties. In: Goodenough, J.B. (eds) Localized to Itinerant Electronic Transition in Perovskite Oxides. Structure and Bonding, vol 98. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45503-5_2

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  • DOI: https://doi.org/10.1007/3-540-45503-5_2

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