Abstract
Sn-filled and Te-doped CoSb3 skutterudites (SnxCo8Sb23.25Te0.75) were synthesized by the encapsulated induction melting process. Single δ-phase was successfully obtained by subsequent heat treatment at 823 K for 6 days. Structural characterizations were carried out through X-ray diffraction studies. Transport properties such as the Seebeck coefficient, electrical resistivity, thermal conductivity, carrier concentration and mobility were measured and analyzed. The unfilled Co8Sb23.25Te0.75 sample showed n-type conductivity from 300 K to 700K. However, the Sn-filled SnxCo8Sb23.25Te0.75 showed n-type conductivity for z=0.25 and 0.5, and p-type conductivity for z=1.0 and 1.5 from 300 K to 700 K. Thermal conductivity was reduced by the impurity-phonon scattering. The dimensionless figure of merit (ZT) was remarkably improved over that of untreated CoSb3. However, the ZT value decreased when filling with z≥1.0 because the conductivity type was changed from n-type to p-type, thereby allowing bipolar conduction. The details are discussed in terms of the two-band model and the bipolar thermoelectric effect.
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References
G. A. Slack,CRC Handbook of Thermoelectrics (ed. D. M. Rowe), p. 407, CRC Press (1995).
G. S. Nolas, H. Takizawa, T. Endo, H. Sellinschegg, and D. C. Johnson,Appl. Phys. Lett. 77, 52 (2000).
H. Takizawa, K. Mimura, M. Ito, T. Sizuki, and T. Endo,J. Alloy. Compd. 282, 79 (1999).
D. Mandrus, A. Migliori, T. W. Darling, M. F. Hundley, E. J. Peterson, and J. D. Thompson,Phys. Rev. B 52, 4926 (1995).
K. T. Wojciechowski.,Mater. Res. Bull. 37, 2023 (2002).
K. T. Wojciechowski, J. Tobol, J. Leszczynski,J. Alloy. Compd. 361, 19 (2003).
X. Y. Li, L. D. Chen, J. F. Fan, W. B. Zhang, T. Kawahara, and T. Hirai,J. Appl. Phys. 98, v (2005).
L. Bertini, K. Billquist, M. Christensen, C. Gatti, L. Holmgren, B. Iversen, E. Mueller, M. Muhammed, G. Noriega, A. Palmqvist, D. Platzek, D. M. Rowe, A. Saramat, C. Stiewe, M. Toprak, S. G. William, and Y. Zhang,Proc. 22 nd Intl. Conf. Thermoelectrics (eds., H. Scherrer and J.-C. Tedenac), p. 48, IEEE, La Grande-Motte, France (2003).
L. Bertini, K. Billquist, M. Christensen, C. Gatti, L. Holmgren, B. Iversen, E. Mueller, M. Muhammed, G. Noriega, A. Palmqvist, D. Platzek, D. M. Rowe, A. Saramat, C. Stiewe, M. Toprak, S. G. William, and Y. Zhang,Proc. 22 nd Intl. Conf. Thermoelectrics (ed. H. Scherrer and J.-C. Tedenac) p. 85, IEEE, La Grande-Motte, France, (2003).
K. Akai, H. Kurisu, T. Shimura, and M. Matsuura,Proc. 16 th Intl. Conf. Thermoelectrics (ed., J. Rüttgers), p. 334, IEEE, Dresden, Germany (1997).
K. Akai, H. Kurisu, T. Moriyama, S. Tamamoto, and M. Matsuura,Proc. 17 th Intl. Conf. Thermoelectrics (ed., K. Koumoto), p. 105, IEEE, Nagoya, Japan (1998).
D. J. Singh, W. E. Pickett,Phys. Rev. B,50, 11235 (1994).
Y. Nagamoto, K. Tanaka, and T. Koyanagi,Proc. 16 th Intl. Conf. Thermoelectrics (ed., J. Rüttgers), p. 302, IEEE, Dresden, Germany (1997).
B. C. Sales, D. Mandrus, and R. K. Williams,Science 272, 1325, (1996).
L. Chapon, D. Ravot, and J. C. Tedenac,J. Alloy. Compd. 282, 58 (1999).
G. S. Nolas, D. T. Morelli, and T. M. Tritt,Ann. Rev. Mater. Sci. 29, 89 (1999).
B. C. Sales, B. C. Chakoumakos, and D. Mandrus,Phys. Rev. B 61, 2475 (2000).
D. Mandrus, A. Migliori, T. W. Darling, M. F. Hundley, E. J. Peterson, and J. D. Thompson,Phys. Rev B 52, 4926 (1995).
X. Shi, W. Zhang, L. D. Chen, and J. Yang,Phys. Rev. Lett. 95, 185503 (2005).
G. S. Nolas, G. A. Slack, D. T. Morelli, T. M. Tritt, A. C. Ehrlich,J. Appl. Phys. 79, 4002 (1996).
B. Chen, J. H. Xu, C. Uher, D. T. Morelli, G. P. Meisner, J.-P. Fleurial, T. Caillat, A. Borshchevsky,Phys. Rev. B 55, 1476 (1997).
B. Chen, J. H. Xu, S. Hu, and C. Uher,Mat. Res. Soc. Symp. Proc. 452, 1037 (1997).
R. C. Mallik, J.-Y. Jung, V. D. Das, S.-C. Ur, and I.-H. Kim,Solid Stat. Comm. 141, 233 (2007).
I.-H. Kim and S.-C. Ur,Met. Mater.-Int. 13, 53 (2007).
K. Matsubara, T. Sakakibara, Y. Notohara, H. Anno, H. Shimizu, and T. Koyangi,Proc. 15 th Intl. Conf. Thermoelectrics (ed., J.-P. Fleurial), p. 96, IEEE, Pasadena, CA, USA (1996).
B. N. Zobrina and L. D. Dudkin,Sov. Phys: Solid State 1, 1668 (1960).
H. J. Goldsmid,Electronic Refrigeration, Pion Ltd. (1986).
A. Bilušié, I. Beslic, J. Ivkov, J. C. Lasjaunias, and A. Smontara,Fizika A 3, 183 (1999).
A. Bilušié, A. Smontara, J. C. Lasjaunias, J. Ivkov, and Y. Calvayrac,Mater. Sci. Eng. 294–296, 711 (2000).
Y. Kawaharada, K. Kurosaki, M. Uno, and S. Yamanaka,J. Alloy. Compd. 315, 193 (2001).
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Mallik, R.C., Jung, JY., Ur, SC. et al. Transport properties on Sn-filled and Te-doped CoSb3 skutterudites. Met. Mater. Int. 14, 615–620 (2008). https://doi.org/10.3365/met.mat.2008.10.615
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DOI: https://doi.org/10.3365/met.mat.2008.10.615