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Pressure-driven metallization with significant changes of structural and photoelectric properties in two-dimensional EuSbTe3

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Abstract

Two-dimensional materials are widely considered to be highly promising for the development of photodetectors. To improve the performance of these devices, researchers often employ techniques such as defect engineering. Herein, pressure is employed as a clean and novel means to manipulate the structural and physical properties of EuSbTe3, an emerging two-dimensional semiconductor. The experimental results demonstrate that the structural phase transformation of EuSbTe3 occurs under pressure, with an increase in infrared reflectivity, a band gap closure, and a metallization at pressures. Combined with X-ray diffraction (XRD) and Raman characterizations, it is evident that the pressure-driven transition from semiconductor Pmmn phase to metallic Cmcm phase causes the disappearance of the charge density wave. Furthermore, at a mild pressure, approximately 2 GPa, the maximum photocurrent of EuSbTe3 is three times higher than that at ambient condition, suggesting an untapped potential for various practical applications.

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摘要

二维材料在光电探测领域有着关键作用。为进一步提高二维光电材料的性能，缺陷工程等化学策略被广泛引入到材料合成中。在本文中，我们利用了一种新型的材料改性手段——压力，来操纵二维半导体EuSbTe3的结构和物理性质。结合X射线衍射和拉曼表征的实验结果可以证明，在压力下， EuSbTe3呈现出结构相变的特征；此外，材料的红外反射率增加，带隙减小，进而在较低的压力驱动下，电荷密度波消失，发生了半导体到金属的转变过程。在大约2 GPa的温和压力下，EuSbTe3的最大光电流是常压环境条件下的3倍，显示出在实际应用中的一定潜力。

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Acknowledgments

This study was financially supported by the National Natural Science Foundation of China (No. U2130116), Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments (MFree), China (No. 22dz2260800), and Shanghai Science and Technology Committee, China (No. 22JC1410300). High-pressure XRD characterizations were performed at Shanghai Synchrotron Radiation Facility (SSRF) beamline 15U. The authors acknowledge Dr. Junyue Wang (HPSTAR), Ms. Xueyan Du (HPSTAR), Dr. Lili Zhang (SSRF), Dr. Haiyun Shu (HPSTAR), and Ms. Huiru Tian (HPSTAR) for their experimental help.

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  1. Zhi-Kai Zhu and Zhong-Yang Li have contributed equally to this work.

Authors and Affiliations

  1. State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, and School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China

    Zhi-Kai Zhu & Wei He

  2. Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, 201203, China

    Zhi-Kai Zhu, Zhong-Yang Li, Yi-Ming Wang, Dong Wang, Fu-Yang Liu, Hong-Liang Dong, Qing-Yang Hu, Ling-** Kong, Hao-Zhe Liu, Wen-Ge Yang & Gang Liu

  3. School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China

    Zhong-Yang Li, **ao-Hui Zeng & Yan-Feng Guo

  4. Poly Technologies, INC, Bei**g, 100010, China

    Zhen Qin

  5. ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China

    Yan-Feng Guo

  6. Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China

    Shuai Yan

  7. Sch Sci, State Key Lab High Power Semicond Lasers, Changchun University Science and Technology, Changchun, 130022, China

    Xuan Fang

  8. Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments (MFree), Shanghai Advanced Research in Physical Sciences (SHARPS), Shanghai, 201203, China

    Gang Liu

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  1. Zhi-Kai Zhu
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Correspondence to Ling-** Kong, Xuan Fang, Wei He or Gang Liu.

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Zhu, ZK., Li, ZY., Qin, Z. et al. Pressure-driven metallization with significant changes of structural and photoelectric properties in two-dimensional EuSbTe3. Rare Met. (2024). https://doi.org/10.1007/s12598-024-02812-8

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