Abstract
Porous silicon (PS) is a complex material with a large variety of properties given by the morphology from low to high porosity, by Si skeleton with sizes in a large interval and by its very reactive internal surface with a large area. This chapter covers more than 10 measurement techniques used for the electrical characterization of PS, separately reviewed are electrical investigations in the dark; under illumination; trap** phenomena studies; and contactless techniques. The electrical characterization is completed by taking into account the corresponding models and the PS morphology. These techniques also serve for the characterization of different devices and applications obtained by using PS with targeted properties.
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Acknowledgments
The contribution to this work was supported by the Romanian National Authority for Scientific Research through the CNCS–UEFISCDI Contract No. PN II-PT-PCCA-9/2012 and by the Romanian Ministry of National Education through the NIMP Core Program PN16-480102.
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Ciurea, M.L., Lepadatu, AM. (2018). Electrical Characterization Techniques for Porous Silicon. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-71381-6_111
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DOI: https://doi.org/10.1007/978-3-319-71381-6_111
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