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Modeling InAs quantum-dot formation on the side surface of GaAs nanowires

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Abstract

We have theoretically studied the formation of InAs quantum dots (QDs) on the side surface of GaAs nanowires (NWs). The effective energies of formation of a thin InAs layer and QDs on the NW side surface are compared with allowance for elastic stresses at the radial heteroboundary of two materials with lattice mismatch. The concept of a critical thickness of the external (wetting) layer is introduced, at which the mechanical stresses stimulate three-dimensional growth of QDs. The dependence of the critical layer thickness on the NW diameter and elastic constants of the system is determined. The phenomenon of partial filling of the NW side surface by QDs is explained by a decrease in the thickness of a deposited InAs layer with increasing height. The results of modeling agree well with the available experimental data.

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Authors and Affiliations

  1. St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences, St. Petersburg, 195220, Russia

    A. D. Bolshakov, V. G. Dubrovskii, **n Yan, **a Zhang & **aomin Ren

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. D. Bolshakov, V. G. Dubrovskii, **n Yan, **a Zhang & **aomin Ren

  3. State Key Laboratory of Information Photonics and Optical Communications, Bei**g University of Posts and Telecommunications, Bei**g, 100876, China

    A. D. Bolshakov, V. G. Dubrovskii, **n Yan, **a Zhang & **aomin Ren

Authors
  1. A. D. Bolshakov
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  2. V. G. Dubrovskii
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  3. **n Yan
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  4. **a Zhang
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  5. **aomin Ren
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Correspondence to A. D. Bolshakov.

Additional information

Original Russian Text © A.D. Bolshakov, V.G. Dubrovskii, **n Yan, **a Zhang, **aomin Ren, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 23, pp. 39–50.

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Bolshakov, A.D., Dubrovskii, V.G., Yan, X. et al. Modeling InAs quantum-dot formation on the side surface of GaAs nanowires. Tech. Phys. Lett. 39, 1047–1052 (2013). https://doi.org/10.1134/S1063785013120043

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  • DOI: https://doi.org/10.1134/S1063785013120043

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