SpringerLink
Log in

Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy

  • XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

On the basis of a comprehensive study of the structural and electronic properties of InAs/GaAs quantum dots grown by vapor-phase epitaxy at atmospheric pressure, a structural model of the quantum dots as three truncated pyramids adjoined at their bases is chosen. The model takes into account the diffusive smearing of the composition near the base and lateral surface as well as the segregation of indium near the vertex. It is established that the wave functions of charge carriers in the ground state are localized in a comparatively small region of the quantum dot near its vertex.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.

Similar content being viewed by others

REFERENCES

  1. J. Shumway, A. J. Williamson, A. Zunger, A. Passaseo, M. de Giorgi, R. Cingolani, M. Catalano, and P. Crozier, Phys. Rev. B 64, 125302 (2001).

    Article  ADS  Google Scholar 

  2. B. N. Zvonkov, I. A. Karpovich, N. V. Baidus’, D. O. Filatov, and S. V. Morozov, Semiconductors 35, 93 (2001).

    Article  ADS  Google Scholar 

  3. I. A. Karpovich, S. B. Levichev, S. V. Morozov, B. N. Zvonkov, D. O. Filatov, A. P. Gorshkov, and A. Yu. Ermakov, Nanotechnology 13, 445 (2002).

    Article  ADS  Google Scholar 

  4. A. P. Gorshkov, I. A. Karpovich, and A. V. Kudrin, Poverkhnost’, No. 5, 25 (2006).

  5. N. S. Volkova, A. P. Gorshkov, D. O. Filatov, and D. S. Abramkin, JETP Lett. 100, 156 (2014).

    Article  Google Scholar 

  6. N. S. Volkova, A. P. Gorshkov, A. V. Zdoroveishchev, L. A. Istomin, and S. B. Levichev, Semiconductors 49, 1592 (2015).

    Article  ADS  Google Scholar 

  7. A. P. Gorshkov, N. S. Volkova, L. A. Istomin, A. V. Zdoroveishev, and S. Levichev, Solid State Commun. 240, 20 (2016).

    Article  ADS  Google Scholar 

  8. M. Grundmann, O. Stier, and D. Bimberg, Phys. Rev. B 52, 11969 (1995).

    Article  ADS  Google Scholar 

  9. P. W. Fry, I. E. Itskevich, D. J. Mowbray, M. S. Skolnick, J. J. Finley, J. A. Barker, E. P. O’Reilly, L. R. Wilson, I. A. Larkin, P. A. Maksym, M. Hopkinson, M. Al-Khafaji, J. P. R. David, A. G. Cullis, G. Hill, and J. C. Clark, Phys. Rev. Lett. 84, 733 (2000).

    Article  ADS  Google Scholar 

  10. http://www.nextnano.com/nextnanoplus.

  11. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).

    Article  ADS  Google Scholar 

  12. N. Liu, J. Tersoff, O. Baklenov, A. L. Holmes, Jr., and C. K. Shih, Phys. Rev. Lett. 84, 334 (2000).

    Article  ADS  Google Scholar 

  13. Ch. Heyn and W. Hansen, J. Cryst. Growth 251, 140 (2003).

    Article  ADS  Google Scholar 

  14. J. M. García, D. Granados, J. P. Silveira, and F. Briones, Microelectron. J. 35, 7 (2004).

    Article  Google Scholar 

  15. W. Sheng and J. P. Leburton, Phys. Rev. B 63, 161301 (2001).

    Article  ADS  Google Scholar 

Download references

ACKNOWLEDGMENTS

We are grateful to B.N. Zvonkov (RPTI NNSU) for growing the structure.

The study was supported by the Ministry of Education and Science of the Russian Federation, government order no. 4.8337.2017/BCh.

Author information

Authors and Affiliations

  1. Nizhny Novgorod State University, 603950, Nizhny Novgorod, Russia

    A. P. Gorshkov, D. A. Pavlov & Yu. V. Usov

  2. Research Institute for Chemistry, Nizhny Novgorod State University, 603950, Nizhny Novgorod, Russia

    N. S. Volkova, L. A. Istomin & S. B. Levichev

Authors
  1. A. P. Gorshkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. S. Volkova
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. D. A. Pavlov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Yu. V. Usov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. L. A. Istomin
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. S. B. Levichev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. P. Gorshkov.

Additional information

Translated by E. Smorgonskaya

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Gorshkov, A.P., Volkova, N.S., Pavlov, D.A. et al. Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy. Semiconductors 52, 1525–1528 (2018). https://doi.org/10.1134/S1063782618120096

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782618120096

Keywords

Search

Navigation