Abstract
The emission properties of Ge layers grown on Si(001) substrates and doped with Sb to different levels are studied by means of steady-state and time-resolved photoluminescence spectroscopy. It is shown that the peak of the steady-state photoluminescence intensity of n-Ge/Si layers at room temperature is observed at an Sb concentration close to the level of the equilibrium solubility of Sb in Ge (~1019 cm–3), which is in agreement with previously obtained results. Studies of the kinetics of photoluminescence associated with direct radiative transitions in Ge show that an effect on the kinetics is produced not only by the concentration of introduced donors, but also the conditions of formation, among them the deposition temperature of n-Ge layers. It is found that an increase in the Sb concentration results in a decrease in the charge-carrier lifetime. It is established that the low growth temperatures required to attain high do** levels in Ge layers also yield a substantial decrease in the charge-carrier lifetime compared to that in Ge layers produced at high temperatures. The conditions of short-term thermal annealing of the structures are determined, wherein the above-mentioned negative effects can be compensated, i.e., the photoluminescence intensity can be enhanced and the charge-carrier lifetime can be extended.
Similar content being viewed by others
REFERENCES
R. Geiger, T. Zabel, and H. Sigg, Front. Mater. 2, 52 (2015).
S. Saito, A. Z. Al-Attili, K. Oda, and Y. Ishikawa, Semicond. Sci. Technol. 31, 043002 (2016).
F. T. Armand Pilon, A. Lyasota, Y.-M. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J. M. Hartmann, A. Chelnokov, J. Faist, and H. Sigg, Nat. Commun. 10, 2724 (2019).
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, Opt. Lett. 35, 679 (2010).
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, Opt. Express 20, 11316 (2012).
L. Carroll, P. Friedli, S. Neuenschwander, H. Sigg, S. Cecchi, F. Isa, D. Chrastina, G. Isella, Y. Fedoryshyn, and J. Faist, Phys. Rev. Lett. 109, 057402 (2012).
R. Geiger, J. Frigerio, M. J. Süess, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, Appl. Phys. Lett. 104, 062106 (2014).
M. R. Barget, M. Virgilio, G. Capellini, Y. Yamamoto, and T. Schroeder, J. Appl. Phys. 121, 245701 (2017).
S. A. Srinivasan, C. Porret, M. Pantouvaki, Y. Shimura, P. Geiregat, R. Loo, J. van Campenhout, and D. van Thourhout, Appl. Phys. Lett. 113, 161101 (2018).
D. Nam, J.-H. Kang, M. L. Brongersma, and K. C. Saraswat, Opt. Lett. 39, 6205 (2014).
J. Allerbeck, A. J. Herbst, Y. Yamamoto, G. Capellini, M. Virgilio, and D. Brida, Appl. Phys. Lett. 114, 241104 (2019).
J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, Opt. Express 15, 11272 (2007).
D. S. Sukhdeo, S. Gupta, K. C. Saraswat, B. Dutt, and D. Nam, Opt. Commun. 364, 233 (2016).
D. V. Yurasov, A. V. Antonov, M. N. Drozdov, V. B. Schmagin, K. E. Spirin, and A. V. Novikov, J. Appl. Phys. 118, 145701 (2015).
J. Vanhellemont and E. Simoen, Mater. Sci. Semicond. Proc. 15, 642 (2012).
D. V. Yurasov, A. I. Bobrov, V. M. Danil’tsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, Semiconductors 49, 1415 (2015).
D. V. Yurasov, A. V. Antonov, M. N. Drozdov, P. A. Yunin, B. A. Andreev, P. A. Bushuykin, N. A. Baydakova, and A. V. Novikov, J. Cryst. Growth 491, 26 (2018).
D. V. Yurasov, A. V. Novikov, N. A. Baidakova, E. E. Morozova, P. A. Yunin, D. V. Shengurov, A. V. Antonov, M. N. Drozdov, and Z. F. Krasilnik, Semicond. Sci. Technol. 33, 124019 (2018).
B. Schwartz, A. Klossek, M. Kittler, M. Oehme, E. Kasper, and J. Schulze, Phys. Status Solidi C, 1686 (2014).
S. C. Jain and D. J. Roulston, Solid-State Electron. 34, 453 (1991).
Ch. Xu, J. Kouvetakis, and J. Menéndez, J. Appl. Phys. 125, 085704 (2019).
M. Virgilio, T. Schroeder, Y. Yamamoto, and G. Capellini, J. Appl. Phys. 118, 233110 (2015).
S. Brotzmann, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. Simoen, E. E. Haller, J. S. Christensen, and P. Werner, Phys. Rev. B 77, 235207 (2008).
A. Chroneos and H. Bracht, Appl. Phys. Rev. 1, 011301 (2014).
D. V. Yurasov, N. A. Baidakova, M. N. Drozdov, E. E. Morozova, M. A. Kalinnikov, and A. V. Novikov, Semiconductors 53, 882 (2019).
ACKNOWLEDGMENTS
The study was carried out using equipment of the Multiple-Access Center, Institute for Physics of Microstructures, Russian Academy of Sciences.
Funding
The study was supported by the Russian Science Foundation, project no. 19-72-10011.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflict of interest.
Additional information
Translated by E. Smorgonskaya
Rights and permissions
About this article
Cite this article
Yurasov, D.V., Baídakova, N.A., Yablonskiy, A.N. et al. Influence of the Growth Conditions and Do** Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon. Semiconductors 54, 811–816 (2020). https://doi.org/10.1134/S1063782620070131
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782620070131