Abstract
The crystal and electronic structure and magnetic, energy, and kinetic properties of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity (HfNi1 − x Co x Sn) are investigated in the temperature and Co concentration ranges T = 80–400 K and N Co A ≈ 9.5 × 1019-5.7 × 1021 cm−3 (x = 0.005–0.30), respectively, and under magnetic field H ≤ 10 kOe. It is established that the degree of compensation of the semiconductor changes due to transformation of the crystal structure upon do**, which leads to the generation of acceptor and donor structural defects. The calculated electronic structure is consistent with the experiment; the HfNi1 − x Co x Sn semiconductor is shown to be a promising thermoelectric material. The results obtained are discussed within the Shklovsky-Efros model for a heavily doped and compensated semiconductor.
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Original Russian Text © V.A. Romaka, P. Rogl, V.V. Romaka, Yu.V. Stadnyk, V.Ya. Krayovskyy, D. Kaczorowski, I.N. Nakonechnyy, A.M. Goryn, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 8, pp. 1009–1015.
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Romaka, V.A., Rogl, P., Romaka, V.V. et al. Structural defect generation and band-structure features in the HfNi1 − x Co x Sn semiconductor. Semiconductors 49, 985–991 (2015). https://doi.org/10.1134/S1063782615080163
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DOI: https://doi.org/10.1134/S1063782615080163