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Structural and phase transformation of A III B V(100) semiconductor surface in interaction with selenium

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Abstract

Surfaces of GaAs(100), InAs(100), and GaP(100) substrates thermally treated in selenium vapor have been investigated by transmission electron microscopy and electron probe X-ray microanalysis. Some specific features and regularities of the formation of A III3 B VI4 (100)c(2 × 2) surface phases and thin layers of gallium or indium selenides A III2 B VI3 (100) on surfaces of different A III B V(100) semiconductors are discussed within the vacancy model of surface atomic structure.

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Authors and Affiliations

  1. Voronezh State University of Engineering Technologies, Voronezh, 394000, Russia

    N. N. Bezryadin

  2. Voronezh Institute of State Firefighting Service, Voronezh, 394052, Russia

    G. I. Kotov & S. V. Kuzubov

Authors
  1. N. N. Bezryadin
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  2. G. I. Kotov
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  3. S. V. Kuzubov
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Corresponding author

Correspondence to G. I. Kotov.

Additional information

Original Russian Text © N.N. Bezryadin, G.I. Kotov, S.V. Kuzubov, 2015, published in Kristallografiya, 2015, Vol. 60, No. 2, pp. 317–321.

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Bezryadin, N.N., Kotov, G.I. & Kuzubov, S.V. Structural and phase transformation of A III B V(100) semiconductor surface in interaction with selenium. Crystallogr. Rep. 60, 289–292 (2015). https://doi.org/10.1134/S1063774515020042

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  • DOI: https://doi.org/10.1134/S1063774515020042

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