Introduction

Polymer memories are proposed to revolutionize electrical applications by providing extremely inexpensive, lightweight and transparent modules that can be fabricated onto plastic, glass or the top layer of CMOS hybrid integration circuits,1, 2 and have been identified as an emerging memory technology by the International Technology Roadmap for Semiconductors since year 2005.3 Rather than encoding ‘0’and ‘1’ as a charge stored in the cell of a silicon device, polymer memory stores data in an entirely different form, such as in a high- and low-conductivity response to an applied voltage.4 The molecular structure of polymers can be tailored by functionalizing them with electron donors (D) and acceptors (A) of different strengths, spacer moieties of different steric effects for the electroactive pendant groups, or nanostructured electroactive materials, to induce different memory behaviors in simple metal/polymer/metal devices.5, 6 Very recently, Liu and Chen7 highlighted the recent developments in D–A polymers for resistive switching memory device applications including conjugated polymers, functional polyimides, nonconjugated pendent polymers and polymer composites. D/A polymer materials (usually carbazole or fluorene donors) with moderate (or incomplete) charge transfer (CT) are likely to exhibit switching behaviors by external voltage bias. The strong dipole moment of molecule helps to sustain the conductive CT state and thus presents a nonvolatile behavior. The optimization of donor/acceptor ratios and the depth of trap** barrier define the volatile/nonvolatile nature.7

In our previous work, we designed a series of D–A-type functional polymers.8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 The device based on conjugated poly[9,9–bis(4-diphenylaminophenyl)-2,7-fluorene] donors covalently bridged with Disperse Red 1 acceptors (DR1-PDPAF-DR1) exhibited an accessible rewritable memory characteristic.10, 17 The excitation of donor promoted CT to the conjugated channel, finally the electrons were at LUMO1 or further at LUMO2 and gave rise to a conductive charge separation state. Polyfluorene-based copolymers containing the side-chain electron-rich TPA and electron-poor cyano substituents exhibited a typical write-once read-many-times (WORM) memory characteristic as the positive charges on the TPA or fluorene moieties were rapidly consumed by the cyano groups as a result of switching operation.14 TPA-based conjugated polyazomethine covalently grafted with graphene oxide (TPAPAM-GO) was directly used to fabricate nonvolatile rewritable memory devices.11 Electrons transmitted from the HOMO of the hole-transporting polymer TPAPAM into LUMO of graphene layer by intramolecular CT interaction established charge transport pathways and switched the device from the OFF to ON state. The effective electron delocalization in graphene nanosheets might stabilize the CT state of TPAPAM-GO, leading to a nonvolatile nature. The electrical bistable switching behavior of the pendent D–A polymer devices was affected by both the electronic structure and surface morphology. The electron-withdrawing DR1-functionalized PVK copolymers (PVDR) were fabricated for memory device as the active layer sandwiched between ITO and Al electrode.13 The PVDR film displayed helical columnar stacks with large grain sizes, whereas a non-aggregated PVDR film exhibited an amorphous morphology with a smaller grain size. Both the PVDR devices showed WORM performance with an ON/OFF current ratio of 105. The asymmetric distribution of the HOMO and LUMO level could stabilize the conductive CT state of the PVDR copolymer leading to the nonvolatile and non-erasable behavior. Besides, the stability of the nano-aggregated PVDR device was much better than that of the non-aggregated PVDR device. The surface defects and large numbers of the grain boundaries in the amorphous PVDR sample acted as charge-trap** centers. An effective charge transport channel and better polymer/metal contacts of the self-assembled smooth PVDR film contributed to the more stable ON state current in the corresponding device. Similar WORM devices were constructed from two PVK derivatives with the pendent azobenzene chromopheres and terminal electron acceptor moieties (–NO2 or –CN).15 Electric field-formed high dipole moments originally from increased charge separation upon CT led to the nonvolatile behavior.

For polymer memory materials, it is very important and profitable to achieve a more balanced charge transport by integrating both electron acceptors and donors into the polymer. The electron-deficient 2,5-diphenyl-1,3,4-oxadiazole (OXD) and its derivatives have been recognized as excellent electron acceptors because of their good chemical, thermal and optical stabilities, as well as the high fluorescence quantum yields.20 Usually, the OXD units are covalently bonded to emissive polymers or small molecules to enhance the electron injection and transport in the emission layer.21, 22, 23, 24,

Conclusion

A new conjugated polymer, PCFO, was synthesized through a Suzuki coupling reaction using tetrakis-(triphenylphosphine)palladium(0) as the catalyst. This copolymer exhibited good solubilities in several common organic solvents and good thermal stability. The absolute fluorescence quantum yield of PCFO changed from 49.1% for a dilute THF solution to 16.2% for a thin film due to the existence of a strong fluorescence quenching effect in the solid state. The HOMO, LUMO, IP and EA values experimentally estimated from the onset of the redox potentials were −5.84, −2.77, 6.10 and 3.03 eV, respectively. The HOMO–LUMO bandgap (3.07 eV) calculated from the electrochemical measurement is nearly identical to the optical bandgap (3.06 eV) estimated from the UV/Vis absorption onset data. A WORM memory device was fabricated by spin coating a PCFO solution as the active layer sandwiched between aluminum electrode and an indium–tin oxide electrodes. This device showed very good memory performance, with an ON/OFF current ratio of ∼105, which is high enough to provide a low misreading rate through the precise control of the ON and OFF states. Intramolecular CT might be responsible for the electrical conductivity switching and memory effects of this polymer.

scheme 1

Synthesis of PCFO.