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Low temperature processed InGaZnO oxide thin film transistor using ultra-violet irradiation

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Abstract

Device performance and bias stability of InGaZnO (IGZO) thin film transistors (TFTs) were investigated as a function of post-treatment with the combination of ultra-violet (UV) irradiation and thermal annealing. Under low temperature annealing at 150°C after UV irradiation, the device performance and bias stability of IGZO TFTs were enhanced with field effect mobility of 10.14 cm2/ Vs and ΔVth below 0.5 V. The electrical characteristics of IGZO TFTs improved without a change in the physical structure and the origin of enhanced device performance can be explained by the changes of the oxygen coordination and the evolution of the electronic structures, such as the band edge states and band alignment of the Fermi level within the bandgap.

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Authors and Affiliations

  1. Department of Physics, Dankook University, Cheonan, 330-714, Korea

    S. H. Cho

  2. Division of Physics and Semiconductor Science, Dongguk University, Seoul, 100-715, Korea

    M. J. Choi & K. B. Chung

  3. Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Korea

    J. S. Park

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  1. S. H. Cho
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  2. M. J. Choi
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  3. K. B. Chung
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  4. J. S. Park
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Correspondence to K. B. Chung.

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Cho, S.H., Choi, M.J., Chung, K.B. et al. Low temperature processed InGaZnO oxide thin film transistor using ultra-violet irradiation. Electron. Mater. Lett. 11, 360–365 (2015). https://doi.org/10.1007/s13391-015-4442-1

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  • DOI: https://doi.org/10.1007/s13391-015-4442-1

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