Abstract
In this paper a novel device structure of Triple Material Double Gate (TMDG) SiO2/High-k stacked (Hetero-Dielectric) Tunnel Field Effect Transistor (TFET) with germanium source has been proposed. Three different work function metals over the channel region act as a barrier in the channel which inturn restricts ambipolar effect. Also the concept of hetero-junction at the interface of source to channel region of the proposed device helps to improve the ION current characteristics. The parameters like surface potential, electric field, ION current and IOFF current of the hetero-junction TMDG hetero-dielectric stacked TFET device have been investigated in this work. The proposed device gives an improved ION current and better suppression in leakage current. From the presented results it is found that very low leakage current IOFF (approximately 10−17 A/mm), prominent enhancement in ION current (approximately 10−4 A/mm) and the ION/IOFF current ratio is 1013. Also there is a notable enhancement in ON and OFF current compared with the silicon based TMDG hetero dielectric TFET. The proposed device exhibit unity current-gain cut-off frequency of 50 GHz, while it is 37 GHz for silicon source TMDG hetero-dielectric stacked TFET. 10−17A/mm leakage current confirms the reduced power consumption and 10−4A/mm ON current confirms to speed up the charging and discharging of output capacitance. The results reveal that the germanium source (Hetero-junction) TM-DG Hetero-Dielectric TFET provides better result for Electric field, ION current, IOFF current and ION/IOFF current ratio than the silicon based TM-DG Hetero-Dielectric TFET. The novel proposed device is fitting for low power applications.
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References
Young KK (1989) Short-channel effect in fully depleted SOI MOSFETs. IEEE Trans Electron Devices 36(2):399–402
Belaid MA, Nahhas AM, Gares M, Daoud K, Latry O (2014) Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests. Microelectron J 45(12):1800–1805
Wu J, Min J, Taur Y (2015) Short Channel Effects in Tunnel FETs. IEEE Trans Electron Devices 62(9):3019–3024
Qin Z, Wei Z, Seabaugh A (2006) Low-subthreshold swing tunnel transistors. IEEE Electron device Lett 27(4):297–300
Vishnoi R, Kumar MJ (2014) Compact analytical model of Dual Material Gate Tunneling Field-Effect Transistor using Interband Tunneling and Channel Transport. IEEE Trans Electron Devices 61(6):1936–1942
Ionescu AM, Riel H (2011) Tunnel Field – effect transistors as energy efficient electronic switches. Nature 479(7373):329–337
Lee MJ, Choi WY (2011) Analytical Model of a single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs). Solid State Electron 63:110–114
Gholizadeh M, Hosseini SE (2014) A 2-D Analytical model for Double Gate Tunnel FETs. IEEE Trans Electron Devices 61(5):494–500
Gracia D, Nirmal D, Moni J (2018) Impact of Leakage Current in Germanium Channel based DMDG TFET using Drain-Gate underlap Technique. AEU-Int J Electron Commun 96:164–169
Prabhat V, Dutta AK (2016) Analytical surface potential and drain current models of dual metal gate double gate tunnel FETs. IEEE Trans Electron Devices 63(5):2190–2196
Bagga N, Sarkar SK (2015) An analytical model for tunnel double gate. TFET IEEE Trans Electron Devices 62(7):2136–2142
Baral B, Das AK, De D, Sarkar A (2016) An analytical model of triple-material double-gate metal–oxide–semiconductor field-effect transistor to suppress short-channel effects. Int J Numeric Model: Electron Netw, Devices Fields 29(1):47–62
Balamurugan NB, Manikandan S, Lakshmi Priya G, Srimathi G (2016) Analytical modeling of dual material gate all around stack architecture of tunnel FET, in proceedings 29th international conference on VLSI Design, 16:294–299
Choi WY, Park B-G, Lee JD, Liu T-JK (2007) Tunneling field Effect Transistors (TFETs) with subthreshold swing (SS) less than 60 mv/dec. IEEE Electron Devices Lett 28(8):743–745
C Grillet, A Cresti, MG Pala (2018) Vertical GaSb/AlSb/InAs Heterojunction Tunnel FETs: A full Quantum Study, IEEE Trans Electron Devices, 65 (7)
Samuel TSA, Balamurugan NB (2014) Analytical modeling and simulation of germanium single gate silicon on insulator TFET. J Semicond 35(3):1–4
Boucartand K, Ionescu AM (2007) Double- gate tunnel FET with high-K gate dielectric. IEEE Trans Electron Devices 54(7):1725–1733
Damrongplasit N, Shin C, Kim SH, Vega RA Study of Random Dopant Fluctuations effects in Germanium-Source Tunnel FETs. IEEE Trans Electron Devices 58(10):3541–3548
Liu X, Hu H, Wang M, Zhang H, Wang B (2018) Study of fully depleted Ge double-gate n-type tunneling field-effect transistors for improvement in on-state current and sub-threshold swing. Phys E Phys E 95:51–58
Lee Y, Nam H, Park J-D, Shin C (2015) Study of work function variation for High –K /Metal –Gate Ge-source Tunnel Field –Effect Transistors. IEEE Trans Electron Devices 2(7):324–326
Ahmed MM Hamam A, Schmidt ME, Muruganathan M, Suzuki S, Mizuta H (2018) Sub-10 nm graphene nano-ribbon tunnel field-effect transistor Carbon 126; 588-593
Kim M, Wakabayashi Y, Nakane R, Yokoyama M, Takenaka M, Takagi S, (2014) High Ion/Ioff Ge-source ultrathin body strained-SOI Tunnel FETs, IEDM 14-331, 2014
Yawei L, Qin W, Wang C, Liao L, Liu X (2018) Recent advances in low-dimensional Heterojunction Based tunnel field effect transistors. Adv Elect Mater 1800569:2018
Bal P, Ghose B, Partha M, Akram MV, Tripathi BMM (2014) Dual material gate junctionless tunnel field effect transistor effect. J Comput Electron 13:230–234
Bardon MG, Neves H, Puers R, Van Hoof C (2010) Pseudo-Two-Dimensional Model for Double Gate Tunnel FETs considering the junctions depletion regions. IEEE Trans Electron Devices 57(4):827–834
Kumar S, Goel E, Singh K, Singh B, Singh PK, Baral K, Jit S (2017) 2D Analytical Modeling of the Electrical Characteristics of Dual material Double Gate TFETs with a SiO2/HfO2 Stacked Gate Oxide Structure. IEEE Trans Electron Devices 64(3):960–968
Verhulst AS, Soree B, Leonelli D, Vandenberghe WG, Groeseneken G (2010) Modelling the single-gate, double-gate and gate-all around tunnel field-effect transistor. J Appl Phys 107:1–8
Graef M, ThomasHoltij FH, AlexanderKloes BI (2014) 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current. Microelectron J 45:1144–1153
Kane EO (1960) Zener tunneling in semiconductors. J Phys Chem Solids 21(2):181–188
Dash S, Mishra GP (2015) A new analytical threshold voltage model of cylindrical gate tunnel FET (CG-TFET), Superlatticies and microstructures, 211-220
Upasana RN, Saxena M, Gupta M (2015) Modeling and TCAD Assessment for Gate Material and Gate Dielectric Engineered TFET Architectures: Circuit-Level Investigation for Digital Applications. IEEE Trans Electron Devices 62(10):3348–3356
Kao K-H, Verhulst AS, Vandenberghe WG, Soree B, Groeseneken G, De Meyer K (2012). Direct and indirect band-to-band tunneling in germanium-based TFETs IEEE Trans Electron Devices 59(2):292–301
Sheeja Herobin Rani C, Bhoopathy Bagan K, Nirmal D, Solomon Roach R (2019) Enhancement of Performance in TFET by Reducing High-K Dielectric Length and Drain Electrode Thickness, Silicon. https://doi.org/10.1007/s12633-019-00328-w
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Rani, C.S.H., Bagan, K.B. & Roach, R.S. Improved Drain Current Characteristics of Germanium Source Triple Material Double Gate Hetero-Dielectric Stacked TFET for Low Power Applications. Silicon 13, 2753–2762 (2021). https://doi.org/10.1007/s12633-020-00556-5
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DOI: https://doi.org/10.1007/s12633-020-00556-5