Abstract
It remains a big challenge to synthesize two-dimensional (2D) GaN material for applications in power nanodevices. Traditional synthetic methods require complex equipment and processes and time consuming. Here, we reported a two-step route to prepare polycrystalline 2D GaN film. The amorphous ultrathin Ga2O3 film was first exfoliated from the surface of liquid gallium. In a vapor phase reaction, 2D Ga2O3 film was then converted into 2D GaN film while maintaining the 2D morphology. Raman and high-resolution transmission electron microscope (HRTEM) analysis implies the successful synthesis of wurtzite-type GaN ultrathin film. This simple strategy proposed in this work will provide more opportunities for applications of GaN ultrathin film in many devices.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Chen KJ, Haeberlen O, Lidow A, et al. GaN-on-Si Power Technology: Devices and Applications[J]. IEEE Transactions on Electron Devices, 2017, 64(3): 779–795
Reshchikov MA, Morkoc H. Luminescence from Defects in GaN[J]. Physical B-Condensed Matter, 2006, 376: 428–431
Flack TJ, Pushpakaran BN, Bayne SB. GaN Technology for Power Electronic Applications: A Review[J]. Journal of Electronic Materials, 2016, 45(6): 2673–2682
Jiang H, Su Y, Zhu J, et al. Piezoelectric and Pyroelectric Properties of Intrinsic GaN Nanowires and Nanotubes: Size and Shape Effects[J]. Nano Energy, 2018, 45: 359–367
Liu B, Yang W, Li J, et al. Template Approach to Crystalline GaN Nanosheets[J]. Nano Letters, 2017, 17(5): 3195–3201
Han P, Gao B, Song B, et al. Large-Sized GaN Crystal Growth Analysis in an Ammonothermal System Based on a Well-Developed Numerical Model[J]. Materials, 2022, 15(12): 4137
Lei L, He D. Synthesis of GaN Crystals Through Solid-State Metathesis Reaction Under High Pressure[J]. Crystal Growth & Design, 2009, 9(3): 1264–1266
Zhang Y, Chen Z, Zhang K, et al. Laser-Assisted Metal-Organic Chemical Vapor Deposition of Gallium Nitride[J]. Physica Status Soli-di-Rapid Research Letters, 2021, 15(6): 2 100 202
Meyer K, Buchholz M, Schaadt DM, et al. GaN Growth on (001) and (110) MgO under Different Ga/N Ratios by MBE[J]. Journal of Crystal Growth, 2022, 589: 126 681
Sanders N, Bayed D, Shi G, et al. Electronic and Optical Properties of Two-Dimensional GaN from First-Principles[J]. Nano Letters, 2017, 17(12): 7345–7349
Singh AK, Zhuang HL, Hennig RG. Ab Initio Synthesis of Single-layer III-V Materials[J]. Physical Review B, 2014, 89(24): 20121–20126
Wu D, Lagally MG, Liu F. Stabilizing Graphitic Thin Films of Wurtzite Materials by Epitaxial Strain[J]. Physical Review Letters, 2011, 107(23): 236 101
Balushiy A, Wang K, Ghosh R, et al. Two-dimensional Gallium Nitride Realized via Graphene Encapsulation[J]. Nature Materials, 2016, 15(11): 1166–1171
Chen Y, Liu K, Liu J, et al. Growth of 2D GaN Single Crystals on Liquid Metals[J]. Journal of the American Chemical Society, 2018, 140(48): 16392–16395
Zavabeti A, Ou JZ, Carey BJ, et al. A Liquid Metal Reaction Environment for the Room-temperature Synthesis of Atomically Thin Metal Oxides[J]. Science, 2017, 358(6361): 332–335
Carey B, Ou J, Clark R, et al. Wafer-scale Two-dimensional Semiconductors from Printed Oxide Skin of Liquid Metals[J]. Nature Communications, 2017, 8: 1–8
Li D, Sumiya M, Fuke S, et al. Selective Etching of GaN Polar Surface in Potassium Hydroxide Solution Studied by X-ray Photoelectron Spectroscopy[J]. Journal of Applied Physics, 2001, 90(8): 4219–4223
Kumar M, Kumar A, Thapa S, et al. XPS Study of Triangular GaN Nano/Micro-needles Grown by MOCVD Technique[J]. Materials Science and Engineering B, 2014, 186: 89–93
Kumar M, Becker M, Wernicke T, et al. Multiphonon Resonant Raman Scattering in Non-polar GaN Epilayers[J]. Applied Physics Letters, 2014, 105(14): 142 106
Park A, Seo T, Chandramohan S, et al. Efficient Stress-relaxation in InGaN/GaN Light-emitting Diodes Using Carbon Nanotubes[J]. Nanoscale, 2015, 7(37): 15099–15105
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
All authors declare that there are no competing interests.
Additional information
Funded by the National Natural Science Foundation of China (No. 52172124), and the Fundamental Research Funds for the Central Universities (WUT: 2021III019JC)
Rights and permissions
About this article
Cite this article
Wang, P., Zhang, B., Liu, X. et al. Ultrathin GaN Film Derived from Amorphous Ga2O3 Film. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 39, 814–818 (2024). https://doi.org/10.1007/s11595-024-2941-3
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11595-024-2941-3