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Plasma-based nanoarchitectonics for vertically aligned dual-metal carbon nanotube field-effect transistor (VA-DMCNFET) device: effect of plasma parameters on transistor properties

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Abstract

In this paper, we intend to show the role of plasma parameters on the performance of the simulated device Plasma-Assisted Vertically Aligned Dual-Metal Carbon Nanotube Field-Effect Transistor (VA-DMCNFET) for the first time. Here, vertically aligned semiconducting Carbon Nanotube (CNT) synthesized using Plasma-Enhanced Chemical Vapor Deposition (PECVD) technique is implemented as the channel. The proposed device shows significant improvement in performance over conventional Nanowire Field-Effect Transistor (NWFET). Next, the device geometry and electrical properties are related to the PECVD parameters by means of a physical model. The DC and analog performance of VA-DMCNFET at various plasma parameters corresponding to different values of CNT channel radius (for fixed CNT channel length) and different values of CNT channel length (for fixed CNT channel radius) is analyzed. It is observed that lower values of plasma parameters are essential for higher values of drain current, transconductance, output conductance, cutoff frequency, and lower values of threshold voltage and channel resistance. On the other hand, higher values of plasma parameters are essential for better ION/IOFF current ratio, early voltage, and gain of the proposed device. By altering the plasma parameters, efficiency of the device can be improved leading to better real-life applicability and performance. The results obtained from this study have been verified with the existing experimental observations for validation of chosen mechanisms.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

Author Mansha Kansal is thankful to Dr. Sonam Rewari for valuable discussions.

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  1. Department of Applied Physics, Delhi Technological University, Bawana Road, Delhi, 110085, India

    Mansha Kansal & Suresh C. Sharma

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  1. Mansha Kansal
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Kansal, M., Sharma, S.C. Plasma-based nanoarchitectonics for vertically aligned dual-metal carbon nanotube field-effect transistor (VA-DMCNFET) device: effect of plasma parameters on transistor properties. Appl. Phys. A 128, 28 (2022). https://doi.org/10.1007/s00339-021-05096-2

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