Abstract
This paper presents SIMS data and analysis for dopant profiles of arsenic and boron implanted in silicon at energies up to 15 MeV. Arsenic and boron are widely used for very high energy implants into and adjacent to the photodiode region of CMOS image sensors to improve quantum efficiency and isolation. To avoid lateral shifts, shadowing effects, reduce implant damage, and to use channeling to increase ion penetration depth, the majority of high energy implants are performed at normal incidence or low beam tilt angles. Precise alignment and control of ion beam angles are, therefore, extremely important.
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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.
References
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Acknowledgments
The authors would like to thank Eurofins EAG Laboratories for the SIMS analysis of high-energy-implanted dopant profiles.
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Kondratenko, S., Rubin, L. Analysis of dopant distribution profiles of very high energy implants. MRS Advances 7, 1472–1475 (2022). https://doi.org/10.1557/s43580-022-00397-x
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DOI: https://doi.org/10.1557/s43580-022-00397-x