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Temperature effect in high-dose, medium-energy implantation with single-wafer-type implanter

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Abstract

The characteristics of high-dose BF2 implantation at medium energy were investigated, focusing on the silicon crystal damage. In a BF2 70 keV 2 × 1015 ions/cm2, increase of sheet resistance (Rs) was observed for high beam current. A systematic study of increased wafer temperature during implantation was used to reduce implantation damage. The increased wafer temperatures reduced the Rs value to that obtained at lower beam currents.

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The datasets generated and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Authors and Affiliations

  1. Sumitomo Heavy Industries Ion Technology Co., Ltd., 1501 Imazaike, Saijo, Ehime, 799-1362, Japan

    Takuya Sakaguchi, Kazutaka Tsukahara, Tae-Hoon Huh & Yoji Kawasaki

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  1. Takuya Sakaguchi
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  2. Kazutaka Tsukahara
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  3. Tae-Hoon Huh
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  4. Yoji Kawasaki
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Correspondence to Takuya Sakaguchi.

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Sakaguchi, T., Tsukahara, K., Huh, TH. et al. Temperature effect in high-dose, medium-energy implantation with single-wafer-type implanter. MRS Advances 7, 1431–1434 (2022). https://doi.org/10.1557/s43580-022-00378-0

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  • DOI: https://doi.org/10.1557/s43580-022-00378-0

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