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Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers

  • XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019
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Abstract

The photoluminescence spectra of epitaxial n+-Ge:P/Si(001) structures are studied. The structures are grown by hot-wire chemical vapor deposition and doped with phosphorus to the maximum electron concentration 1 × 1020 cm–3 from a source based on thermally decomposed GaP. The effects of the do** level and rapid thermal annealing of n+-Ge:P layers on the photoluminescence spectra are studied. It is demonstrated that the epitaxial n+-Ge:P/Si(001) layers grown by hot-wire chemical vapor deposition are promising for application as active regions of light-emitting optoelectronic devices operating in the near-infrared spectral region.

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Funding

The study was supported by the Russian Science Foundation, project no. 18-72-10061.

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Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    D. S. Prokhorov, V. G. Shengurov, S. A. Denisov, D. O. Filatov, A. V. Zdoroveishev, V. Yu. Chalkov, A. V. Zaitsev, M. V. Ved’ & M. V. Dorokhin

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, 607680, Nizhny Novgorod, Russia

    N. A. Baidakova

Authors
  1. D. S. Prokhorov
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  2. V. G. Shengurov
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  3. S. A. Denisov
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  4. D. O. Filatov
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  5. A. V. Zdoroveishev
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  6. V. Yu. Chalkov
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  7. A. V. Zaitsev
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  8. M. V. Ved’
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  9. M. V. Dorokhin
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  10. N. A. Baidakova
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Corresponding author

Correspondence to D. S. Prokhorov.

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The authors declare that they have no conflict of interest.

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Translated by E. Smorgonskaya

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Prokhorov, D.S., Shengurov, V.G., Denisov, S.A. et al. Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers. Semiconductors 53, 1262–1265 (2019). https://doi.org/10.1134/S1063782619090161

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  • DOI: https://doi.org/10.1134/S1063782619090161

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