Abstract
The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size D crit, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter D 2crit is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.
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Original Russian Text © S.V. Sitnikov, S.S. Kosolobov, A.V. Latyshev, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 212–215.
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Sitnikov, S.V., Kosolobov, S.S. & Latyshev, A.V. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth. Semiconductors 51, 203–206 (2017). https://doi.org/10.1134/S106378261702021X
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DOI: https://doi.org/10.1134/S106378261702021X