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Role of n-ZnO Layer on the Improvement of Interfacial Properties in ZnO/InGaN p-i-n Solar Cells

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Abstract

InGaN has been predicted to be an efficient photovoltaic material. However, the high-density polarization charges and large potential barrier at the i-InGaN/n-GaN interface create an electric field that severely decreases the collection efficiency of p-InGaN/i-InGaN/n-GaN heterostructure solar cells. We demonstrate that, according to numerical simulations, utilizing a p-InGaN/i-InGaN/n-ZnO heterostructure can greatly reduce the piezoelectric field in the absorption layer and reduce the potential barrier between the n-type layer and the absorption layer interface, thus improving the performances of the solar cell. Moreover, we studied the influence of the band alignment on the ZnO/InGaN interface on the performance of the solar cell. We found that the band alignment of the ZnO/InGaN interface can keep the solar cells at a very high efficiency over a wide scope.

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Acknowledgements

This study was supported by the National Natural Science Foundation of China (Nos. 61564007 and 11364034) and Jiangxi Provincial Sci-Tech Support Plan (No. 20141BBE50035).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Nanchang University, Nanchang, 330031, China

    Shitao Liu & Li Wang

  2. National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang, 330047, China

    Zhijue Quan

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  1. Shitao Liu
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  2. Li Wang
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  3. Zhijue Quan
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Correspondence to Li Wang.

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Liu, S., Wang, L. & Quan, Z. Role of n-ZnO Layer on the Improvement of Interfacial Properties in ZnO/InGaN p-i-n Solar Cells. Trans. Tian** Univ. 23, 420–426 (2017). https://doi.org/10.1007/s12209-017-0058-x

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