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Growth of uniformly doped black phosphorus films through versatile atomic substitution

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Abstract

For the emerging excellent two-dimensional semiconductor black phosphorus (BP), do** has been proven as an effective way to tune its intrinsic properties. For the further development and expansion of BP-based research and application, the direct growth of doped BP films is highly desirable but still remains a challenge. In this work, the direct growth of uniformly doped-BP films on silicon substrates is achieved by a simple one-step vapor growth. The proposed decoupled feeding strategy significantly improves the effectiveness of do** and enables uniform dopant distribution in the grown films. The substitutional do** nature and high crystal quality of the grown doped films are confirmed by microscopy and crystal structural determination. Electrical transport measurement results reveal that Se and Te dopants perform mild electron do** effect and enable improve the electron mobility relative to pristine BP, while As dopant performs mild hole do** effect. It is believed that the direct growth of doped BP films in this work will facilitate the research development of BP in electronics and optoelectronics.

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Acknowledgements

This work was supported by National Key Research and Development Program of China (Grant No. 2021YFA1200804), National Natural Science Foundation of China (Grant Nos. 62274175, 61927813), and Jiangsu Province Key R&D Program (Grant No. BE2021007-3). We thank Zhiyun LI for analyzing the XPS measurement results. The support from the Vacuum Interconnected Nanotech Workstation (Nano-X) of Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences is also acknowledged.

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Authors and Affiliations

  1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China

    Cheng Chen & Junrong Zhang

  2. CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China

    Cheng Chen, Yang Lu, Chang Li, **ngang Hou, Yongjie Wang, Junrong Zhang, Junyong Wang & Kai Zhang

  3. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China

    Yang Lu & Yongjie Wang

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  1. Cheng Chen
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  2. Yang Lu
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  3. Chang Li
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  4. **ngang Hou
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  5. Yongjie Wang
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  6. Junrong Zhang
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  7. Junyong Wang
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  8. Kai Zhang
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Correspondence to Kai Zhang.

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Chen, C., Lu, Y., Li, C. et al. Growth of uniformly doped black phosphorus films through versatile atomic substitution. Sci. China Inf. Sci. 66, 160407 (2023). https://doi.org/10.1007/s11432-023-3762-9

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  • DOI: https://doi.org/10.1007/s11432-023-3762-9

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