The electrical and photoelectrical characteristics of Ga2O3/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-radiation with λ = 222 nm only at reverse biases. Thermal annealing of the films under study does not change the mechanism of current flow in the structures, while the sensitivity of Ga2O3/n-GaAs structures to UV-radiation increases by an order of magnitude.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 154–158, May, 2020.
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Petrova, Y.S., Almaev, A.V., Kalygina, V.M. et al. Anodic Gа2O3 Films Obtained by Oxidation of n-GaAs Plates in Galvanostatic Mode. Russ Phys J 63, 882–887 (2020). https://doi.org/10.1007/s11182-020-02112-5
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DOI: https://doi.org/10.1007/s11182-020-02112-5