Abstract
An intense emission green color phosphor of Al-doped Ba1.98SiO4:0.02Eu2+ synthesized with different Si3N4/SiO2 ratio was prepared by conventional sintering method. The X-ray diffraction patterns, the photoluminescence, scanning micrograph and thermal quenching properties of Ba1.98SiO4:0.02Eu2+ with different Si3N4/SiO2 ratio were investigated in detail. As the Si3N4/SiO2 ratio increases, the emission intensity enhanced gradually until the optimum Si3N4/SiO2 ratio reached 3/2. The PL intensity with Si3N4/SiO2 = 3/2 is about four times of the initial intensity of Ba1.98SiO4:0.02Eu2+ phosphor and the reason was discussed clearly. Furthermore, when we introduced Al3+ ions into the host, the samples exhibited outstanding optical properties and smaller thermal quenching behavior compared with Ba1.98SiO4:0.02Eu2+ phosphor. The emission intensity of Ba1.98Si1−xAlxO4:0.02Eu2+ series increased until x reached 7% and the emission intensity of x = 0.07 is 5 times of the originated intensity of Ba1.98SiO4:0.02Eu2+ synthesized without Si3N4. The smaller thermal quenching behavior of Al-doped phosphors was studied clearly, too. All the results suggested that Al-doped Ba1.98SiO4:0.02Eu2+ phosphor synthesized with Si3N4/SiO2 = 3/2 can be a candidate green phosphor for WLEDs.
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This work is supported by the National Natural Science Foundation of China (Nos. 11704043, 51702378) and the Special Foundation for theoretical physics Research Program of China (Nos. 11747113, 11747117).
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Wang, C., Jiang, J., Zhu, G. et al. Optical and thermal quenching properties of Al-doped Ba1.98SiO4:0.02Eu2+ phosphor synthesized with different Si3N4/SiO2 ratio. J Mater Sci: Mater Electron 30, 4599–4606 (2019). https://doi.org/10.1007/s10854-019-00752-z
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DOI: https://doi.org/10.1007/s10854-019-00752-z