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Chain \protect\mbox{FeRAMs}
A chain FeRAM (TM) is a solution for future high-density and high-speed nonvolatile memory. One memory cell consists of one transistor and one...
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Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD
Recent research by our group, concerned with the preparation of ferroelectric thin films by MOCVD, is summarized. MOCVD has been investigated as a...
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Nanoscale Phenomena in Ferroelectric Thin Films
In this chapter, recent progress in our group in the area of thin-film ferroelectrics is reviewed. The specific focus is on nanoscale...
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Ferroelectric Technologies \newline for Portable Equipment
Key technologies for portable equipment are low-voltage operation, low power consumption, and protocol-flexibility. Ferroelectric technology...
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Static and Dynamic Properties of Domains
The static domain pattern of ferroelectric thin films results from the crystal structure of the film and the misfit strain caused by the...
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Half-Metallicity and Slater-Pauling Behavior in the Ferromagnetic Heusler Alloys
A significant number of the intermetallic Heusler alloys have been predicted to be half-metals. In this contribution we present a study of the basic...
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Materials Design and Molecular-Beam Epitaxy of Half-Metallic Zinc-Blende CrAs and the Heterostructures
Zinc-blende half-metallic ferromagnets are promising materials in order to open up a new world of semiconductor spintronics. We design a new class of...
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Magnetism and Structure of Magnetic Multilayers Based on the Fully Spin Polarized Heusler Alloys Co2MnGe and Co2MnSn
Our Introduction starts with a short general review of the magnetic and structural properties of the Heusler compounds which are under discussion in...
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Half-Metallic Ferromagnetism and Stability of Transition Metal Pnictides and Chalcogenides
It is highly desirable to explore robust half-metallic ferromagnetic materials compatible with important semiconductors for spintronic applications....
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Epitaxial Growth of NiMnSb on GaAs by Molecular Beam Epitaxy
The similarity in crystal structures allows for the epitaxial growth of the candidate half-metal NiMnSb on GaAs. We discuss the growth by molecular...
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Surface Segregation and Compositional Instability at the Surface of Half-Metal Ferromagnets and Related Compounds
Interface engineering in order to exploit the possibilities of the interface electronic structure may be a route to a good spin injector....
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Role of Structural Defects on the Half-Metallic Character of Heusler Alloys and Their Junctions with Ge and GaAs
Heusler–alloys, such as Co2MnGe and Co2MnSi, predicted from firstprinciples to be half–metallic, have recently attracted great attention for...
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The Properties of Co2Cr1-xFexAl Heusler Compounds
The classical concept of band structure tuning as used for semiconductors by partly replacing one atom by a chemical neighbor without altering the...
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Heusler Alloyed Electrodes Integrated in Magnetic Tunnel-Junctions
As a consequence of the growing theoretically predictions of 100% spin polarized half– and full–Heusler compounds over the past 6 years, Heusler...
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Improvement of Memory Retention in Metal–Ferroelectric–Insulator–Semiconductor (MFIS) Structures
A simple model has been derived to investigate the retention characteristics of an MFIS structure by considering the effects of currents through the...
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Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films
The spontaneous polarization (P s ) and the remanent polarization (P r ) of films...
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Scanning Nonlinear Dielectric Microscopy
In this Chapter, we first describe the development of subnanometer-resolution scanning nonlinear dielectric microscopy (SNDM) for the observation of...
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Preparation and Properties of Ferroelectric–Insulator–Semiconductor Junctions Using YMnO3 Thin Films
On the basis of consideration of the design of materials for MFIS-FETs, the application of YMnO3 and Y2O3 films as the ferroelectric and insulator...
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Materials Integration Strategies
In this chapter, materials integration strategies for the fabrication of high-density nonvolatile ferroelectric random access memories...
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The FET-Type FeRAM
The current status of the fabrication and integration of ferroelectric-gate field effect transistors (FETs) is reviewed. Novel applications of...