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1. Hole transport improvement in CdZnO/ZnO light emitting diodes with wedge shaped electron blocking layers

   Jong-Ryeol Kim in Journal of the Korean Physical Society

   Article 27 April 2023
   

2. Etching-free pixel definition in InGaN green micro-LEDs

   The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage. Defects near sidewall regions act as...

   Zhiyuan Liu, Yi Lu, ... **aohang Li in Light: Science & Applications

   Article Open access 24 May 2024
   

3. Photoelectric Charging of Dust in Protoplanetary Disks

   Abstract

   The process of gas ionization-recombination and dust particle charging under the effect of X-ray radiation in the conditions of space plasma...

   T. I. Morozova, I. A. Kuznetsov in Moscow University Physics Bulletin

   Article 01 June 2023

4. Numerical investigation of traps and optical response in III-V nitride quantum LED

   The impact of trap** on the optical properties of Gallium Nitride (GaN) Light Emitting Diodes (LED) has been analyzed in this work. The analysis is...

   M. Manikandan, D. Nirmal, ... G. Dhivyasri in Optical and Quantum Electronics

   Article 22 November 2020
   

5. Improving the efficiency of micro-LEDs at high current densities employing a micro-current spreading layer-confined structure

   In this paper, a micro-current spreading layer (mCSL)-confined micro-LED is proposed and fabricated. The mCSL is used to restrict the current channel...

   **aoyan Liu, Zexing Yuan, ... Pengfei Tian in Applied Physics B

   Article 06 June 2022
   

6. Applications to Plasma Spectroscopy

   Applications to plasma spectroscopy are presented for different types of plasmas that are currently of great interest for science and applications:...

   Frank B. Rosmej, Valery A. Astapenko, Valery S. Lisitsa in Plasma Atomic Physics

   Chapter 2021
   

7. InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

   To improve the internal quantum efficiency (IQE) and light output power of InGaN light-emitting diodes (LEDs), we proposed an In-composition gradient...

   **en Sang, Yuan Xu, ... Yuhuai Liu in Optoelectronics Letters

   Article 09 January 2024

8. The influence of a trap state on the photoluminescence decay times under single pulse excitation

   We numerically calculated the time-resolved photoluminescence spectra using the bimolecular trap**-detrap** model. The variations of carrier...

   K. P. Chiu in Optical and Quantum Electronics

   Article Open access 03 January 2023
   

9. Dephasing Processes and Carrier Dynamics in (In,Ga)As Quantum Dots

   In this contribution the dynamics of the optically induced interband polarization in (In,Ga)As/(Ga,Al)As quantum dots is reviewed, following the...

   Paola Borri, Wolfgang Langbein in Single Quantum Dots

   Chapter
   

10. Radiative and non-radiative exciton recombination rate constants in ZnSe clusters

    Abstract

    Understanding the origin of photoluminescence intermittency and its correlation with microstructure is crucial for the design and...

    Ning Du, Sheng** Yu, ... Mingli Yang in The European Physical Journal B

    Article 25 December 2019
    

11. Electron Recombination as a Way of Deexciting the ^129mSb Isomer

    Abstract

    A way of exciting nuclei using reverse conversion is studied. Nuclear excitation occurs due to resonance absorption of the kinetic energy of...

    F. F. Karpeshin, M. B. Trzhaskovskaya, L. F. Vitushkin in Bulletin of the Russian Academy of Sciences: Physics

    Article 01 October 2020

12. Monolithic Silicon Light Sources

    Monolithic silicon light sources (LEDs and lasers) could have a significant impact when integrated on silicon chips. After a general introduction to...

    Philippe M. Fauchet in Silicon Photonics

    Chapter
    

13. A design and comparative investigation of graded Al_xGa_1 − x N QB for W-Al_0.58GaN/W-Al_0.64–0.58 GaN DUV laser diode on AlN substrate

    In this study, we aim to improve the efficiency of AlGaN-based deep-UV-LD by thickness grading and composition grading of the quantum barrier. We...

    Hameed Ur Rehman, Naveed Ur Rahman, ... Yuhuai Liu in The European Physical Journal D

    Article 12 February 2024
    

14. Piezophototronic Effect on Light-Emitting Diode

    Piezophototronic effect is to use the piezoelectric polarization charges at a p–n junction to effectively tube the separation, recombination, and...

    Zhong Lin Wang, Yan Zhang, Weiguo Hu in Piezotronics and Piezo-Phototronics

    Chapter 2023
    

15. Fundamental limits of electron and nuclear spin qubit lifetimes in an isolated self-assembled quantum dot

    Combining external control with long spin lifetime and coherence is a key challenge for solid state spin qubits. Tunnel coupling with electron Fermi...

    George Gillard, Ian M. Griffiths, ... Evgeny A. Chekhovich in npj Quantum Information

    Article Open access 24 February 2021
    

16. Doped Effects of Quaternary AlInGaN Last Quantum Barrier for Deep-Ultraviolet Laser Diodes Without Electron Blocking Layer

    In this work, we investigate the performance of doped quaternary AlInGaN last quantum barrier (LQB) of deep-ultraviolet laser diodes (DUV LDs)...

    Mengshuang Yin, **en Sang, ... Yuhuai Liu in Journal of Russian Laser Research

    Article 01 July 2023

17. Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures

    Abstract

    Carrier recombination through shallow boron-impurity centers in doped weakly compensated silicon is studied. Much attention is paid to...

    T. T. Muratov in Semiconductors

    Article 04 December 2019
    

18. Optoelectronic Devices

    The operation principles of three optoelectronic devices—solar cells, light-emitting diodes, and semiconductor lasers—are reviewed. Solar cells are...

    Mykhaylo Evstigneev in Introduction to Semiconductor Physics and Devices

    Chapter 2022
    

19. Anti-Stokes Luminescence of Bulk and Thin-Film β-InSe under Infrared Optical Excitation

    A new mechanism of low-temperature radiative recombination in bulk crystals of β-InSe and thin films exfoliated from them, resulting in the...

    S. N. Nikolaev, M. A. Chernopitsskii, ... V. S. Krivobok in JETP Letters

    Article 01 August 2020

20. High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions

    High-performance active terahertz modulators as the indispensable core components are of great importance for the next generation communication...

    Pu**g Zhang, Qihang Liang, ... Guozhen Yang in Light: Science & Applications

    Article Open access 05 March 2024