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High-density via RRAM cell with multi-level setting by current compliance circuits
In this work, multi-level storage in the via RRAM has been first time reported and demonstrated with the standard FinFET CMOS logic process....
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Polyvinylammonium-immobilized FAPbI3 Perovskite Grains for Flexible Fibrous Woven RRAM Array
AbstractWoven resistive random access memory (RRAM) is a promising subject in flexible wearable electronic devices. In this work, polyvinylammonium...
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CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments
Resistive switching random access memory (RRAM) is one of the most promising candidates with high-density three-dimensional integration...
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Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic System
Recently, various resistance-based memory devices are being studied to replace charge-based memory devices to satisfy high-performance memory...
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Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
This paper studies the deposition of Hafnium Oxide (HfO 2 ) thin films (TF) based on forming-free resistive random access memory (RRAM) devices using...
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A Novel Approach to Analyze the Resistance of the RRAM Based on the Conductive Nano Filament Length and Width Variation
In the present as well as in the future world, the interaction of a person with the connected devices will be more. It has been predicted that these...
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Conductive Filament Variation of RRAM and Its Impact on Single Event Upset
Resistive random-access memory (RRAM) is a non-charge-based two-terminal non-volatile memory device. It is a promising candidate for usage in high...
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Contact size-dependent switching instabilities in HfO2 RRAM
A comprehensive understanding of the resistive switching mechanisms that activate REDOX-based random access memory devices is necessary to further...
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Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices
In this paper, we present the results of our systematic investigations of the resistive switching characteristics of HfO 2 -based metal–insulator–metal...
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Resistive Random Access Memory (RRAM) Technology: From Material, Device, Selector, 3D Integration to Bottom-Up Fabrication
Emerging nonvolatile memory technologies are promising due to their anticipated capacity benefits, nonvolatility, and zero idle energy. One of the...
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Low power and stable resistive switching in graphene oxide-based RRAM embedded with ZnO nanoparticles for nonvolatile memory applications
The present study reports the role of zinc oxide nanoparticles (ZnO NPs) embedded in graphene oxide (GO)-based RRAM for non-volatile memory...
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Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films
Resistive random access memory (RRAM) technology is receiving a lot of attention as one of the next-generation nonvolatile memory technologies with a...
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Spinel ferrites for resistive random access memory applications
Cutting edge science and technology needs high quality data storage devices for their applications in artificial intelligence and digital industries....
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Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiOx (x = 1, 0.97, 0.94) thin films
Polycrystalline NiO thin films with controlled oxygen vacancy concentration were deposited on Pt/Ta/SiO 2 /Si substrates using RF sputtering. Auger...
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Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that...
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Investigation of FePt electrode induced influence on resistive switching characteristics of SiO2-based RRAM
To improve the resistive switching performance of RRAM devices, it is desirable to find electrodes with good ability of oxygen reservoir. In this...
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Strongly stable resistive random access memory based on quasi-two-dimensional perovskites
Resistive random access memory (RRAM) has been regarded as a challenging alternative for emerging memory technologies. In recent years,...
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An effective supramolecular metallohydrogel-based non-volatile memory device for application in logic gate circuit
There is a huge demand for storage capabilities in a variety of applications due to the recent explosion of emerging memory technologies. Memory...
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Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout...
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Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications
Bilayer selectorless resistive random-access memories (RRAM) have been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS)...