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Enhancing AlGaN/GaN HEMT Performance through Gate-All-Around AlN Passivation: A Comparative Study with a Planar MIS-HEMT
This article offers a unique method for improving the performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) by combining an AlN...
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Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer
Due to the enhanced-mode (E-mode) operation, AlGaN/GaN high-electron-mobility transistors (HEMTs) are considered to be safer for circuit operation....
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APTES functionalized AlGaN/GaN HEMT for carbon dioxide sensing at room temperature
In this work, the 3-aminopropyltriethoxysilane (APTES) was functionalized in the gate region of AlGaN/GaN high electron mobility transistor (HEMT)...
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Suitability of thin-GaN for AlGaN/GaN HEMT material and device
In this study, we report about the suitability of thin-GaN (~ 200 nm) for AlGaN/GaN HEMT (High Electron Mobility Transistor) material and device....
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Parasitic side channel formation due to ion implantation isolation of GaN HEMT
Low-dose high-energy ion implantation is effective for isolating GaN high-electron-mobility transistors (HEMTs). However, lateral penetration of...
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Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate
This paper presents a metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) device, operating in enhancement mode, with a...
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Understanding the Role of Near-Junction Diamond Heat Spreaders in Packaged 20-Gate GaN HEMT Chips via Thermal Simulation
The study of heat dissipation from GaN high-electron-mobility transistors (HEMT) is important for devising an effective thermal management strategy....
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Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications
In this work, an enhancement-mode (E-mode) p-GaN gate metal–oxide–semiconductor high-electron-mobility transistor (MOS-HEMT) with 10-nm-thick Al 2 O 3 ...
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Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics
AlGaN/GaN strain relief layer high-electron mobility transistors (AG SRL HEMT) on silicon wafers are attracting a lot of attention due to their cost...
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DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/ β-Ga2O3 HEMT
In this work, High Electron Mobility Transistor is grown on various Substrates such as silicon (Si), silicon carbide (SiC), and sapphire substrate to...
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Design and Investigation of Dual Dielectric Recessed-Gate AlGaN/GaN HEMT as Gas sensor Application
This paper presents a highly sensitive Recessed Gate/source/drain AlGaN/GaN HEMT (RG-AlGaN/GaN HEMT) based Carbon Monoxide gas sensors. Many types of...
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Radiation-Sensitive AlGaN/GaN MOS-HEMT-Based Dosimeter
An AlGaN/GaN MOS-HEMT (metal oxide semiconductor–high electron mobility transistor)-based dosimeter has been proposed to demonstrate and evaluate the...
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Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness
In this research article, a recessed field-plated gate AlGaN/GaN-based nano-high electron mobility transistor (HEMT) grown on a β-Ga 2 O 3 substrate is...
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Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs
In this paper, we present the results of a comparative analysis of two alternative SiN x passivation techniques of AlGaN/GaN high electron mobility...
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Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate
p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor...
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Small-Signal Analysis of Double-Channel AlGaN/GaN HEMT and MOSHEMT with Undoped Barrier for Microwave Applications
In this work, DC and RF performance of a double-channel AlGaN/GaN HEMT (DCHEMT) and a double-channel AlGaN/GaN MOSHEMT (DCMOSHEMT) with an undoped...
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A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures
We report on the measured effects of temperature on the DC and RF transconductance for several important HEMT technologies. Six different HEMT...
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High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs
GaN-based enhancement-mode high-electron-mobility transistors (HEMTs) are potential frontrunners for high-frequency power applications due to their...
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A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations
The efficiency and switching performance of a L G = 0.25 μm GaN-HEMT with an aluminium gallium nitride back barrier (BB) and discrete field plate is...
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Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric
While SiN has been the choice of dielectric for N-polar GaN high electron mobility transistors (HEMTs), high-k dielectrics need to be explored for...
