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A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations

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Abstract

The efficiency and switching performance of a LG = 0.25 μm GaN-HEMT with an aluminium gallium nitride back barrier (BB) and discrete field plate is examined in this article. The discrete-field plate minimizes the gate capacitance, such as drain gate capacitance and source gate capacitance, owing to its minimal FP area. Moreover, the AlGaN BB suppresses the vertical leakage towards the SiC substrate. Therefore, a tremendous enhancement is achieved in device efficiency and its switching characteristics. The discrete field plated HEMT with AlGaN BB offers a very low ON resistance (RON) and minimum gate capacitance (CG) of 32.5 Ω.mm and 975 fF/mm respectively. Besides, the switching loss (ESW) and switching delay (DSW) are greatly reduced using the proposed field plated HEMT with AlGaN BB. It exhibits an ESW and DSW of 24 pJ and 5.8 pS, respectively. Furthermore, the exhibited current gain cut-off frequency of the proposed HEMT is 28 × 109 Hz. Hence, the discrete field plated HEMT with AlGaN BB is an excellent device for 28-GHz TX/RX switches in a 5G base station.

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Acknowledgments

The authors acknowledge the Centre for Research in Semiconductor Devices, Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore, India, for providing all facilities to carry out this research work.

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Authors and Affiliations

  1. Karunya Institute of Technology and Sciences, Coimbatore, India

    A. S. Augustine Fletcher, D. Nirmal, Merlin Gilbert Raj & K. Husna Hamza

  2. Sri Ramakrishna Engineering College, Coimbatore, India

    L. Arivazhagan

  3. SR University, Warangal, Telangana, India

    J. Ajayan

  4. Anil Neerukonda Institute of Technology and Sciences, Visakapatnam, India

    P. Murugapandiyan & Ramkumar Natarajan

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  1. A. S. Augustine Fletcher
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Contributions

A.S. Augustine Fletcher- TCAD Simulation and paper writing. D. Nirmal- Idea and concept. L. Arivazhagan- Idea and concept. J. Ajayan- Idea and concept. Merlin Gilbert Raj- Technical correction. Husna Hamza- Paper editing and English correction. P. Murugapandiyan- Paper editing and English correction. Ramkumar Natarajan- Paper editing and English correction.

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Correspondence to D. Nirmal.

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Fletcher, A.S.A., Nirmal, D., Arivazhagan, L. et al. A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations. J. Electron. Mater. 51, 1215–1225 (2022). https://doi.org/10.1007/s11664-021-09367-9

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