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Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer
Due to the enhanced-mode (E-mode) operation, AlGaN/GaN high-electron-mobility transistors (HEMTs) are considered to be safer for circuit operation....
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Enhancing AlGaN/GaN HEMT Performance through Gate-All-Around AlN Passivation: A Comparative Study with a Planar MIS-HEMT
This article offers a unique method for improving the performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) by combining an AlN...
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APTES functionalized AlGaN/GaN HEMT for carbon dioxide sensing at room temperature
In this work, the 3-aminopropyltriethoxysilane (APTES) was functionalized in the gate region of AlGaN/GaN high electron mobility transistor (HEMT)...
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Suitability of thin-GaN for AlGaN/GaN HEMT material and device
In this study, we report about the suitability of thin-GaN (~ 200 nm) for AlGaN/GaN HEMT (High Electron Mobility Transistor) material and device....
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Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics
AlGaN/GaN strain relief layer high-electron mobility transistors (AG SRL HEMT) on silicon wafers are attracting a lot of attention due to their cost...
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Radiation-Sensitive AlGaN/GaN MOS-HEMT-Based Dosimeter
An AlGaN/GaN MOS-HEMT (metal oxide semiconductor–high electron mobility transistor)-based dosimeter has been proposed to demonstrate and evaluate the...
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Design and Investigation of Dual Dielectric Recessed-Gate AlGaN/GaN HEMT as Gas sensor Application
This paper presents a highly sensitive Recessed Gate/source/drain AlGaN/GaN HEMT (RG-AlGaN/GaN HEMT) based Carbon Monoxide gas sensors. Many types of...
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Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness
In this research article, a recessed field-plated gate AlGaN/GaN-based nano-high electron mobility transistor (HEMT) grown on a β-Ga 2 O 3 substrate is...
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Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs
In this paper, we present the results of a comparative analysis of two alternative SiN x passivation techniques of AlGaN/GaN high electron mobility...
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Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate
p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor...
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Small-Signal Analysis of Double-Channel AlGaN/GaN HEMT and MOSHEMT with Undoped Barrier for Microwave Applications
In this work, DC and RF performance of a double-channel AlGaN/GaN HEMT (DCHEMT) and a double-channel AlGaN/GaN MOSHEMT (DCMOSHEMT) with an undoped...
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DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/ β-Ga2O3 HEMT
In this work, High Electron Mobility Transistor is grown on various Substrates such as silicon (Si), silicon carbide (SiC), and sapphire substrate to...
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A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations
The efficiency and switching performance of a L G = 0.25 μm GaN-HEMT with an aluminium gallium nitride back barrier (BB) and discrete field plate is...
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Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Do**-Free GaN Cap
GaN-based enhancement-mode high-electron-mobility transistors (HEMTs) with a 25-nm-thick undoped GaN (u-GaN) cap underneath the gate metallization on...
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Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate
This paper investigates the DC and RF performance of a gate field plate (GFP) and proposed grated gate field plate (GGFP) AlGaN/GaN high electron...
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Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics
A numerical simulation-based high-performance metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on an ultra-wide band gap...
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Parasitic side channel formation due to ion implantation isolation of GaN HEMT
Low-dose high-energy ion implantation is effective for isolating GaN high-electron-mobility transistors (HEMTs). However, lateral penetration of...
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Performance Analysis of Normally-on Dual Gate Algan/Gan Hemt
This paper presents the novel normally-on dual gate (DG) AlGaN/GaN high electron mobility transistor. At high frequency, the dual gate structure...
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Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs
In this study, the effect of Si X N Y bilayer passivation materials on the electrical properties of an AlGaN high electron mobility transistor (HEMT)...
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Novel Vertical GAA-AlGaN/GaN Do**less MIS-HEMT: Proposal and Investigation
This paper presents a gate all around (GAA) AlGaN/GaN HEMT (GAA-MIS-HEMT) with AlN as an interfacial passivation layer. Gate all around technique is...
