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Overview
A review on ferroelectric thin films used for nonvolatile random access memories is given. Particular attention is paid to fundamental...
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Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM
A capacitor-on-metal/via-stacked-plug (CMVP) memory cell was developed for the 0.25 micr meter CMOS logic embedded FeRAM. Using a 445 C MOCVD...
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Novel Si-Substituted Ferroelectric Films
In this chapter, properties of novel Si-substituted ferroelectric films are presented. The films are a solid solution between Bi...
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The Application of FeRAM to Future Information Technology World
The future information technology world needs a simple identification and secure information storage medium. The advanced smart card is a...
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A Chemical Approach Using Liquid Sources Tailored to Bi-Based Layer-Structured Perovskite Thin Films
The electrical properties of Bi-based layer-structured perovskite compounds strongly depend on their anisotropic crystal structure. Because of...
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High-Density Integration
Ferroelectric random access memory (FeRAM) has been pursued as a promising new memory due to its ideal memory properties, such as fast random...
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The Sputtering Technique
In this chapter, the formation of ferroelectric films using the sputtering technique is described. A main topic is a mass production system...
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Growth and Magnetotransport Properties of Thin Co2MnGe Layered Structures
Co2MnGe and other related Heusler alloys are investigated in the context of magnetotransport properties in multilayer (ML) structures. The most...
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Chain \protect\mbox{FeRAMs}
A chain FeRAM (TM) is a solution for future high-density and high-speed nonvolatile memory. One memory cell consists of one transistor and one...
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Nanoscale Phenomena in Ferroelectric Thin Films
In this chapter, recent progress in our group in the area of thin-film ferroelectrics is reviewed. The specific focus is on nanoscale...
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Static and Dynamic Properties of Domains
The static domain pattern of ferroelectric thin films results from the crystal structure of the film and the misfit strain caused by the...
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Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD
Recent research by our group, concerned with the preparation of ferroelectric thin films by MOCVD, is summarized. MOCVD has been investigated as a...
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Ferroelectric Technologies \newline for Portable Equipment
Key technologies for portable equipment are low-voltage operation, low power consumption, and protocol-flexibility. Ferroelectric technology...
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Half-Metallicity and Slater-Pauling Behavior in the Ferromagnetic Heusler Alloys
A significant number of the intermetallic Heusler alloys have been predicted to be half-metals. In this contribution we present a study of the basic...
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Materials Design and Molecular-Beam Epitaxy of Half-Metallic Zinc-Blende CrAs and the Heterostructures
Zinc-blende half-metallic ferromagnets are promising materials in order to open up a new world of semiconductor spintronics. We design a new class of...
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Magnetism and Structure of Magnetic Multilayers Based on the Fully Spin Polarized Heusler Alloys Co2MnGe and Co2MnSn
Our Introduction starts with a short general review of the magnetic and structural properties of the Heusler compounds which are under discussion in...
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Half-Metallic Ferromagnetism and Stability of Transition Metal Pnictides and Chalcogenides
It is highly desirable to explore robust half-metallic ferromagnetic materials compatible with important semiconductors for spintronic applications....
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Epitaxial Growth of NiMnSb on GaAs by Molecular Beam Epitaxy
The similarity in crystal structures allows for the epitaxial growth of the candidate half-metal NiMnSb on GaAs. We discuss the growth by molecular...
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Surface Segregation and Compositional Instability at the Surface of Half-Metal Ferromagnets and Related Compounds
Interface engineering in order to exploit the possibilities of the interface electronic structure may be a route to a good spin injector....
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Role of Structural Defects on the Half-Metallic Character of Heusler Alloys and Their Junctions with Ge and GaAs
Heusler–alloys, such as Co2MnGe and Co2MnSi, predicted from firstprinciples to be half–metallic, have recently attracted great attention for...