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Performance Study of Ambipolar Conduction Suppression for Dual-Gate Tunnel Field-Effect Transistors
The continuous device structure degradation in nanoscaled device modeling restricts conventional tunnel field-effect transistor (TFET) to meet the...
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Suppressing Ambipolar Current in UTFET by Auxiliary Gate
In this paper, a new U-shaped channel tunneling-based field-effect transistor (UTFET) with auxiliary gate above drain is proposed. The ambipolar...
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Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications
Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to...
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Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications
Radiofrequency switches that drive or block high-frequency electromagnetic signals—typically, a few to tens of gigahertz—are essential components in...
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Evolution of Tunnel Field-Effect Transistor and Scope in Low Power Applications: A Detailed Review
The emerging novel device tunnel field-effect transistor (TFET) has fascinated the scientific community with its distinct features such as lower...
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Controlling the ambipolar current in ultrathin SOI tunnel FETs using the back-bias effect
A two-dimensional (2-D) technology computer-aided design (TCAD)-based simulation study of the back bias in the ultrathin silicon-on-insulator (SOI)...
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Investigation of Device and Circuit-Level Performances of Dielectric Engineered Do**less SOI Schottky Barrier MOSFET
In this work, we have represented a simulation study that includes the device and circuit-level performance improvements of SOI Schottky barrier (SB)...
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Simulation and Performance Analysis of Gate Source Overlapped Dual Material Double Gate Tunnel Field Effect Transistor with SiO2/HfO2 Stacked-Gate Oxide Structure
In this article, we proposed Gate-Source Overlap** Dual Material Double Gate Tunnel Field Effect Transistor (GSDMDGFET) with SiO2/HfO2 Stacked Gate...
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Analytical Modeling and Simulation of a Triple-Material Double-Gate SON TFET with Stacked Front-Gate Oxide for Low-Power Applications
This paper proposes a two-dimensional analytical model of a triple-material double-gate silicon-on-nothing tunnel field-effect transistor (TM-DG SON...
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A Dielectric Modulated Step-Channel Junction-Less TFET (DM-SC-JLTFET) for Label-Free Detection of Breast Cancer Cells: Design and Sensitivity Analysis
This work designs a novel dielectric modulated step channel Junctionless tunnel field effect (DM-SC-JLTFET) for the label-free detection of breast...
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Ambipolarity Property in Tunnel FET to Sense High Bit Rate Signals
In this paper, the ambipolarity property of Silicon Tunnel Field Effect Transistor (TFET) is utilized to sense transitions in high bit rate...
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Germanium pocket based tunnel FET with underlap: design and simulation
Analysis has been carried out to check and study the working of a novel pocketed version of TFET in comparison to a conventional TFET. We have...
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Performance Assessment of Electrostatically Doped Dual Pocket Vertical Tunnel Field-Effect Transistor
A recent do**-less (DL) charge plasma tunnel FET (TFET) structure has been suggested to diminish ambipolar features with improved analog/RF figure...
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Vapor growth of V-doped MoS2 monolayers with enhanced B-exciton emission and broad spectral response
Dynamically engineering the optical and electrical properties in two-dimensional (2D) materials is of great significance for designing the related...
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Design and Analysis of ION and Ambipolar Current for Vertical TFET
This draft investigates about the vertical tunnel FET (VTFET) with heterostructure at channel/source interface of SiGe layer using Sentaurus...
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Blue emitting exciplex for yellow and white organic light-emitting diodes
White organic light-emitting diodes (WOLEDs) have several desirable features, but their commercialization is hindered by the poor stability of blue...
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Logic gates based on neuristors made from two-dimensional materials
A single biological neuron can efficiently perform Boolean operations. Artificial neuromorphic systems, on the other hand, typically require several...
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Self-powered and bipolar photodetector based on a van der Waals metal-semiconductor junction: Graphene/WSe2/Fe3GeTe2 heterojunction
A self-driven photosensor with signal-reversal response has the potential to work as a photodetector in complex environments with multiple signals...
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A New Z-Shaped Gate Line Tunnel FET with Improved Electrostatic Performance
In this paper, we simulated a new line tunnel field-effect transistor (TFET) with a Z-shaped gate. The proposed Z-TFET generates vertical tunneling...
