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Article
Structural and electronic characteristics of Fe-doped β-Ga2O3 single crystals and the annealing effects
As capture traps, Fe impurities were intentionally incorporated into beta-gallium oxide (β-Ga2O3) crystals to compensate for unintentional n-type conductivity for applications of semi-insulated single-crystal sub...
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Article
Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures
Exciton localization phenomena are considered here to comprehend the high internal quantum efficiency in InGaN/GaN multiple-quantum-well structures having discrete quantum dots (QDs) prepared by metal–organic-...
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Article
Open AccessInfluence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field
The refractive index of AlN has a direct influence on AlGaN-based deep ultraviolet optoelectronic devices, such as the external quantum efficiency of light-emitting devices. Revealing the dependence of the ref...
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Article
Investigation of the Optical Properties of InSb Thin Films Grown on GaAs by Temperature-Dependent Spectroscopic Ellipsometry
InSb thin films were grown on GaAs substrates by metal organic chemical vapor deposition (MOCVD) and investigated by temperature-dependent spectroscopic ellipsometry (TD-SE). The refractive index, extinction c...
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Article
Open AccessStrain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
This paper reports the photoluminescence (PL) properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling...
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Article
Open AccessRecombination Pathways in Green InGaN/GaN Multiple Quantum Wells
This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to ...
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Article
Temperature-dependent Optical Properties of AlN Thin Films by Spectroscopy Ellipsometry
In this work, temperature-dependent optical properties of a series of AlN thin films with different thickness are studied by spectroscopic ellipsometry (SE) ranging from 300 to 825K. The fitted refractive inde...
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Article
Study of lattice deformation and atomic bond length for AlxGa1−xN epi-layers with synchrotron radiation X-ray absorption spectroscopy
The lattice deformation in wurtzite AlxGa1−xN epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spec...
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Article
Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer
Two ultraviolet InGaN/GaN light emitting diodes (LEDs) with and without InGaN underlying layer beneath the multiple quantum wells (MQWs) were grown by metal-organic vapor phase epitaxy. Based on the photolumin...
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Article
Erratum to: “Surface enhanced Raman scattering of light by ZnO nanostructures”
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Article
Surface enhanced Raman scattering of light by ZnO nanostructures
Raman scattering (including nonresonant, resonant, and surface enhanced scattering) of light by optical and surface phonons of ZnO nanocrystals and nanorods has been investigated. It has been found that the no...
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Article
Shallow–Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar ( \( 11\bar{2}2 \) ) Facet GaN
We report growth and characterization of a shallow–deep InGaN/GaN multiple-quantum-well (MQW) system for dual-wavelength emission grown on semipolar ( ...
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Article
A12O3 as a Transition Layer for GaN and InGaN growth on ZnO by MOCVD
GaN and InGaN layers were grown on annealed 20 and 50nm Al2O3/ZnO substrates by metalorganic chemical vapor deposition (MOCVD). GaN was only observed by high resolution x-ray diffraction (HRXRD) on 20 nm Al2O3/Zn...
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Article
Spectroscopic Ellipsometry Studies of Tb-doped SiO2 Thin Films
The optical properties of Tb-doped SiO2 films have been studied from multi-wavelength spectroscopic ellipsometry (SE) measurements performed over the 250–1100 nm wavelength range. The SE modeling carried out with...
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Article
Investigation of molecular co-do** for low ionization energy p-type centers in (Ga,Al)N
This work initiates an investigation of molecular co-do** to produce p-type centers in (Ga,Al)N with ionization energies lower than Mg. Dopant complexes can be formed between a doubly ionized acceptor such a...
