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Direct Fabrication of Inkjet-Printed Dielectric Film for Metal–Insulator–Metal Capacitors

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  1. Article

    Open Access

    Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trap** Layer

    Crystalline ZrTiO4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trap** layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a ...

    Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen… in Scientific Reports (2017)

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  2. Article

    Open Access

    Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode

    A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO x /Ni/n+-Si was proposed to suppress sneak current where TaN/Zr...

    Chia-Chun Lin, Yung-Hsien Wu, You-Tai Chang, Cherng-En Sun in Nanoscale Research Letters (2014)

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