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Simplified ZrTiO _x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode

A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO _x /Ni/n⁺-Si was proposed to suppress sneak current where TaN/Zr...

Chia-Chun Lin, Yung-Hsien Wu, You-Tai Chang, Cherng-En Sun in Nanoscale Research Letters (2014)