Page
%P
![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Open AccessSimplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode
A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO x /Ni/n+-Si was proposed to suppress sneak current where TaN/Zr...