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Article
Activation of Beryllium-Implanted GaN by Two-Step Annealing
For the first time, p-type do** through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), follow...
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Article
Activation of Beryllium-Implanted GaN by Two-Step Annealing
For the first time, p-type do** through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), follow...