Skip to main content

2 Result(s)

within Yuejun Sun Remove this filter Applied and Technical Physics Remove this filter

and

  1. No Access

    Article

    Activation of Beryllium-Implanted GaN by Two-Step Annealing

    For the first time, p-type do** through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), follow...

    Yuejun Sun, Leng Seow Tan, Soo ** Chua… in MRS Online Proceedings Library (2012)

  2. Article

    Activation of Beryllium-Implanted GaN by Two-Step Annealing

    For the first time, p-type do** through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), follow...

    Yuejun Sun, Leng Seow Tan, Soo ** Chua… in MRS Internet Journal of Nitride Semiconduc… (2000)

    Download PDF (58 KB) View Article