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Correction: Superconducting ScP4 with a novel phosphorus framework
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Open AccessMemristive devices based on mass printed organic resistive switching layers
Resistive random-access memory is a candidate for next-generation non-volatile memory architectures. In this study, we use flexographic roll-to-roll printing technology for deposition of the resistive layer, a...
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Erratum to: Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization
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Open AccessFabrication of polyimide spheres using a pulsed laser at 355 nm
A new approach for manufacturing hollow polyimide (PI) microspheres is presented. The method is based on cavitation bubbles and small CO2 gas bubble which can generate uniform microspheres. When liquid PI was irr...
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Erratum to: Modulation of diffusion with polarized lasers
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Open AccessNanosecond laser ablation and deposition of silicon
Nanosecond-pulsed KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) lasers were used to ablate a polycrystalline Si target in a background pressure of <10−4 Pa. Si films were deposited on Si and GaAs...
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Open AccessQuantitative analysis of fine nano-sized precipitates in low-carbon steels by small angle neutron scattering
The small angle neutron scattering (SANS) technique was used to determine the nano-sized precipitates in interstitial free (IF) and low-carbon (LC) steels with a hot-rolling temperature. The real-space direct ...