6 Result(s)

Article

Retraction Note: Integrating Epitaxial-Like Pb(Zr,Ti)O₃ Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Scientific Reports 6: Article number: 23189; published online: 23 March 2016; updated: 02 September 2016 This Article has been retracted by the authors. The data presented in Figures 1e, 1g, 1h, 2b-d, 4a-b, 4d...

Jae Hyo Park, Hyung Yoon Kim, Gil Su Jang, Ki Hwan Seok, Hee Jae Chae… in Scientific Reports (2016)

Article

Erratum to: Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization

Sol Kyu Lee, Ki Hwan Seok, Jae Hyo Park, Hyung Yoon Kim, Hee Jae Chae… in Applied Physics A (2016)

Article

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organi...

Jae Hyo Park, Gil Su Jang, Hyung Yoon Kim, Ki Hwan Seok, Hee Jae Chae… in Scientific Reports (2016)

Article

Integrating Epitaxial-Like Pb(Zr,Ti)O₃ Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and elec...

Jae Hyo Park, Hyung Yoon Kim, Gil Su Jang, Ki Hwan Seok, Hee Jae Chae… in Scientific Reports (2016)