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Article
Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface
Anodic aluminum oxide (AAO) films with different porosities were fabricated on the surfaces of InGaN/GaN multiple quantum wells (MQWs). We measured the photoluminescence spectra of these samples and then calcu...
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Article
Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
Uniform InGaN nanodots were successfully grown on SiO2 pretreated GaN surface. It was found that the InGaN nanodots were 20 nm in diameter and 5 nm in height, approximately. After the growth of two periods of InG...
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Article
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
InN films with electron concentration ranging from n∼1017 to 1020 cm−3 grown by metal–organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were investigated by variable-temperature photolumi...