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4 Result(s)

within X. M. Hua Remove this filter Characterization and Evaluation of Materials Remove this filter

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  1. No Access

    Article

    Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface

    Anodic aluminum oxide (AAO) films with different porosities were fabricated on the surfaces of InGaN/GaN multiple quantum wells (MQWs). We measured the photoluminescence spectra of these samples and then calcu...

    Z. G. Yu, G. F. Yang, P. Chen, R. H. Liu, H. Zhao, B. Liu, X. M. Hua… in Applied Physics A (2013)

  2. No Access

    Article

    Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells

    Uniform InGaN nanodots were successfully grown on SiO2 pretreated GaN surface. It was found that the InGaN nanodots were 20 nm in diameter and 5 nm in height, approximately. After the growth of two periods of InG...

    G. F. Yang, P. Chen, Z. G. Yu, B. Liu, Z. L. **e, X. Q. **u, Z. L. Wu… in Applied Physics A (2012)

  3. No Access

    Article

    Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar

    GaN thin films were etched by inductively coupled plasma (ICP). The effects of BCl3 and Ar with different Cl2 fraction are studied and compared. The ICP power and RF power are also altered to investigate the diff...

    G. F. Yang, P. Chen, Z. L. Wu, Z. G. Yu… in Journal of Materials Science: Materials in… (2012)

  4. No Access

    Article

    Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films

    InN films with electron concentration ranging from n∼1017 to 1020 cm−3 grown by metal–organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were investigated by variable-temperature photolumi...

    B. Liu, Z. Zhang, R. Zhang, D. Y. Fu, Z. L. **e, H. Lu, W. J. Schaff… in Applied Physics A (2010)