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Article
Open AccessTrap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes
We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were s...
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Article
Open AccessRobust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing
Electronic textile (e-textile) allows for high-end wearable electronic devices that provide easy access for carrying, handling and using. However, the related technology does not seem to be mature because the ...
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Article
Open AccessSubstrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams
Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nan...
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Article
Open AccessSurface energy-mediated construction of anisotropic semiconductor wires with selective crystallographic polarity
ZnO is a wide band-gap semiconductor with piezoelectric properties suitable for opto-electronics, sensors and as an electrode material. Controlling the shape and crystallography of any semiconducting nanomater...
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Article
Growth and characterization of Si1−x Getx QDs on Si/Si0.8Ge0.2 layer
Si1−x Getx QDs structures were grown onto Si/Si0.8Ge0.2 layer using RPCVD system. Ge composition in Si1−x Getx QDs was determined as about 30% and...
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Article
Nanoscale dry etching of germanium by using inductively coupled CF4 plasma
The nanoscale dry etching of germanium was investigated by using inductively coupled CF4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ∼200 mC/cm2. When ICP Power...
